DS9667TN 반도체 회로 부품 판매점
High Current/Voltage Darlington Drivers
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 National Semiconductor |
December 1995
DS2003 DS9667 DS2004
High Current Voltage Darlington Drivers
General Description
The DS2003 DS9667 DS2004 are comprised of seven high
voltage high current NPN Darlington transistor pairs All
units feature common emitter open collector outputs To
maximize their effectiveness these units contain suppres-
sion diodes for inductive loads and appropriate emitter base
resistors for leakage
The DS2003 DS9667 has a series base resistor to each
Darlington pair thus allowing operation directly with TTL or
CMOS operating at supply voltages of 5 0V
The DS2004 has an appropriate input resistor to allow direct
operation from CMOS or PMOS outputs operating from sup-
ply voltages of 6 0V to 15V
The DS2003 DS9667 DS2004 offer solutions to a great
many interface needs including solenoids relays lamps
small motors and LEDs Applications requiring sink currents
beyond the capability of a single output may be accommo-
dated by paralleling the outputs
Features
Y Seven high gain Darlington pairs
Y High output voltage (VCE e 50V)
Y High output current (IC e 350 mA)
Y TTL PMOS CMOS compatible
Y Suppression diodes for inductive loads
Y Extended temperature range
Connection Diagram
Order Numbers
16-Lead DIP
DS2003
DS9667
DS2004
J Package
Number
J16A
DS2003MJ
DS2003TJ
DS2003CJ
DS9667MJ
DS9667TJ
DS9667CJ
DS2004MJ
DS2004TJ
DS2004CJ
N Package
Number
N16E
DS2003TN
DS2003CN
DS9667TN
DS9667CN
DS2004TN
DS2004CN
M Package
Number
M16A
DS2003TM
DS2003CM
DS2004TM
DS2004CM
Top View
TL F 9647 – 1
C1996 National Semiconductor Corporation TL F 9647
RRD-B30M66 Printed in U S A
Absolute Maximum Ratings (Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Lead Temperature
Ceramic DIP (Soldering 60 seconds)
Molded DIP (Soldering 10 seconds)
300 C
265 C
Storage Temperature Range
Ceramic DIP
Molded DIP
Operating Temperature Range
DS2003M DS9667M
DS2004M
DS2003T DS9667T
DS2004T
DS2003C DS9667C
DS2004C
b65 C to a175 C
b65 C to a150 C
b55 C to a125 C
b55 C to a125 C
b40 C to a105 C
b40 C to a105 C
0 C to a85 C
0 C to a85 C
Maximum Power Dissipation
Cavity Package
Molded Package
S O Package
at 25 C
2016 mW
1838 mW
926 mW
Derate cavity package 16 13 mW C above 25 C derate molded DIP pack-
age 14 7 mW C above 25 C Derate S O package 7 4 mW C
Input Voltage
30V
Output Voltage
55V
Emitter-Base Voltage
6 0V
Continuous Collector Current
500 mA
Continuous Base Current
25 mA
Electrical Characteristics TA e 25 C unless otherwise specified (Note 2)
Symbol Parameter
Conditions
Min Typ Max Units
ICEX
VCE(Sat)
II(ON)
II(OFF)
VI(ON)
CI
tPLH
tPHL
IR
VF
Output Leakage
Current
Collector-Emitter
Saturation Voltage
Input Current
Input Current
(Note 4)
Input Voltage
(Note 5)
Input Capacitance
Turn-On Delay
Turn-Off Delay
Clamp Diode
Leakage Current
Clamp Diode
Forward Voltage
TA e 25 C VCE e 50V (Figure 1a)
TA e 85 C VCE e 50V (Figure 1a) for Commercial Grade
TA e 25 C VCE e 50V VI e 1 0V (Figure 1b) DS2004
IC e 350 mA IB e 500 mA (Figure 2) (Note 3)
IC e 200 mA IB e 350 mA (Figure 2)
IC e 100 mA IB e 250 mA (Figure 2)
VI e 3 85V (Figure 3)
DS2003 DS9667
VI e 5 0V (Figure 3)
DS2004
VI e 12V (Figure 3)
TA e 85 C for Commercial
IC e 500 mA (Figure 4)
VCE e 2 0V IC e 200 mA (Figure 5)
DS2003 DS9667
VCE e 2 0V IC e 250 mA (Figure 5)
VCE e 2 0V IC e 300 mA (Figure 5)
VCE e 2 0V IC e 125 mA (Figure 5)
DS2004
VCE e 2 0V IC e 200 mA (Figure 5)
VCE e 2 0V IC e 275 mA (Figure 5)
VCE e 2 0V IC e 350 mA (Figure 5)
0 5 VI to 0 5 VO
0 5 VI to 0 5 VO
VR e 50V (Figure 6)
IF e 350 mA (Figure 7)
TA e 25 C
TA e 85 C
1 25
11
09
0 93
0 35
10
20
100
500
16
13
11
1 35
05
1 45
50 100
24
27
30
50
60
70
80
15 30
10
10
50
100
17 20
mA
V
mA
mA
V
pF
ms
ms
mA
mA
V
Note 1 ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed They are not meant to imply that the devices
should be operated at these limits The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation
Note 2 All limits apply to the complete Darlington series except as specified for a single device type
Note 3 Under normal operating conditions these units will sustain 350 mA per output with VCE (Sat) e 1 6V at 70 C with a pulse width of 20 ms and a duty cycle of
30%
Note 4 The II(OFF) current limit guaranteed against partial turn-on of the output
Note 5 The VI(ON) voltage limit guarantees a minimum output sink current per the specified test conditions
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