1N750 반도체 회로 부품 판매점
0.5W Silicon Planar Zener Diodes
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 Micro Commercial Components |
MCC
omponents
21201 Itasca Street Chatsworth
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1N746
THRU
1N759
Features
• Zener Voltage 3.3V to 12V
• Silicon Planar Power Zener Diodes
• Standards zener voltage tolerance is ±10% , Add suffix “A” for
±5% tolerance, other tolerances are available upon request
Mechanical Data
• Case: DO-35 glass case
• Polarity: Color band denotes cathode end
• Weight: Approx. 0.13 gram
Maximum Ratings
Zener Current
Power Dissipation
@ TA=50oC
Junction Temperature
Storage Temperature
Range
Symbol
Ptot
TJ
TSTG
Value
See Table 1
500
175
-65 to 175
Units
mW
oC
oC
Electrical Characteristics @ 25°C Unless Otherwise Specified
Thermal resistance
Symbol
RqJA
Maximum
300
Unit
oC/W
Forward Voltage
@ IF=200mA
VF 1.5
V
NOTE:
1) Valid provided that a distance of 8mm from case are kept
at ambient temperature
2) Power derating: 4.0mW/oC above 50oC
0.5W Silicon Planar
Zener Diodes
DO-35
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM MIN MAX
A --- .166
B --- .079
C --- .020
D 1.000 ---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com
1N746 thru 1N759
MCC
MCC PART
NUMBER
1N746
1N747
1N748
1N749
1N750
1N751
1N752
1N753
1N754
1N755
1N756
1N757
1N758
1N759
NORMAL
ZENER
VOLTAGE
Vz@ Izt
VOLTS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
12
TEST
CURRENT
Izt
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
MAXIMUM
ZENER
IMPEDANCE
Zzt @ Izt
OHMS
28
24
23
22
19
17
11
7.0
5.0
6.0
8.0
10
17
30
MAXIMUM
MAXIMUM REVERSE ZENER
LEAKAGE CURRENT CURRENT TYPICAL TEMP.
Ir @ Vr=1V
uA @25oC uA @125oC
IZM
mA
COEFFICIENT
%/oC
10 30 110
-.066
10 30 100
-.058
10 30 95
-.046
2 30 85
-.033
2 30 75
-.015
1 20 70 ±.010
1 20 65 +.030
0.1 20
60
+.049
0.1 20
55
+.053
0.1 20
50
+.057
0.1 20
45
+.060
0.1 20
40
+.061
0.1 20
35
+.062
0.1 20
30
+.062
Note:
1) Tested with pulses tp= 20ms
2) Valid provided that leads are kept at ambient temperature at a
distance of 8mm from case.
3) Zener impedance derived by superimposing on IZT, a 60 cps, rms
ac current equal to 10% IZT (2 mA ac)
4) Allowance has been made for the increase in VZ due to ZZ and for
the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 400mW.
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( mcc )
1N750 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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