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ROHM Semiconductor |
Super Fast Recovery Diode
RF05VYM1SFH
Datasheet
Series
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land size figure (Unit : mm)
Standard Fast Recovery
11..34±±00..015
0.17±0.1
0.05
1.1
Application
High frequency rectification
Features
1) Small mold type (TUMD2M)
2) High speed switching
3) Low forward voltage
0.8±0.05
ROHM : TUMD2M
0.6±0.2
0.1
dot (year week factory) + day
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
TUMD2M
Structure
Cathode
Anode
Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
100 V
Reverse voltage
VR Direct voltage
Average current
Io
On glass epoxy substrate
60Hz half sin wave , Resistive load
Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
100
0.5
6
V
A
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=0.5A - 0.82 0.98 V
Reverse current
IR
VR=100V
- 0.01 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 12 25 ns
Thermal resistance
Rth(j-l)
Junction to lead
- - 30 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.03 - Rev.A
RF05VYM1SFH
Electrical characteristic curves
Data Sheet
10
1
0.1
0.01
Tj = 150°C
Tj = 125°C
Tj = 75°C
0.001
0
Tj = 25°C
200 400 600 800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10
1
Tj = 125°C
Tj = 75°C
Tj = 25°C
0.1
0
20 40 60 80
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100
100
f = 1MHz
Ta = 25°C
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
10
IFSM
8.3ms 8.3ms
1cyc.
1
0.1
1
Tj = 25°C
10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
2/4
2015.03 - Rev.A
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