DT1042-04TS 반도체 회로 부품 판매점
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
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 Diodes |
DT1042-04TS
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary
VBR (min)
6.2V
IPP (max)
6A
CI/O (typ)
0.65pF
Description
This new generation TVS is designed to protect sensitive electronics
from the damage due to ESD. The combination of low capacitance
and high ESD surge capability makes it ideal for use in high speed
ports such as USB 2.0, IEEE1394, HDMI, Laptop and Personal
Computers, Flat Panel Displays, Video Graphics Displays, SIM Ports.
Applications
• USB 2.0
• IEEE1394
• SIM Ports
• Portable Electronics
• Computers and Peripheral
Features
• Low Clamping Voltage, I/O to VSS
Typical 9V at 10A 100ns, TLP
Typical 7.7V at 6A 8μs/20μs
• IEC 61000-4-2 (ESD): Air – +27/-19kV, Contact – ±16kV
• IEC 61000-4-4 (EFT): Level-4
• 4 Channels of ESD Protection
• TLP Dynamic Resistance: 0.25Ω
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish Annealed over Copper leadframe
• (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
• Weight: 0.013 grams (approximate)
TSOT26
I/O4 VCC I/O3
Top View
I/O1 VSS I/O2
Device Schematic
Ordering Information (Note 4)
Product
DT1042-04TS-7
Compliance
Standard
Marking
BE5
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
BAE157
BE5= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2013
A
Jan Feb
12
DT1042-04TS
Document number: DS36673 Rev. 2 - 2
2014
B
Mar Apr
34
2015
C
May Jun
56
2016
D
Jul Aug
78
1 of 5
www.diodes.com
2017
E
Sep Oct
9O
2018
F
Nov Dec
ND
June 2014
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current, per IEC 61000-4-5
Peak Pulse Power, per IEC 61000-4-5
Operating Voltage (DC)
ESD Protection – Contact Discharge, per IEC 61000-4-2
ESD Protection – Air Discharge, per IEC 61000-4-2
Operating Temperature
Storage Temperature
Symbol
IPP_I/O
PPP_I/O
VDC
VESD_I/O
VESD_I/O
TOP
TSTG
DT1042-04TS
Value
±6
55
5.5
±16
+27/-19
-55 to +85
-55 to +150
Unit
A
W
V
kV
kV
°C
°C
Conditions
I/O to VSS, 8/20μs
I/O to VSS, 8/20μs
I/O to VSS
I/O to VSS
I/O to VSS
—
—
Thermal Characteristics
Characteristic
Power Dissipation Typical (Note 5)
Thermal Resistance, Junction to Ambient Typical (Note 5)
Symbol
PD
RθJA
Value
300
417
Unit
mW
°C/W
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Working Voltage
Reverse Current (Note 6)
Reverse Current (Note 6)
Reverse Breakdown Voltage
Forward Clamping Voltage
Reverse Clamping Voltage(Note 7)
ESD Clamping Voltage
Dynamic Resistance
Channel Input Capacitance
Variation of Channel Input
Capacitance
Symbol
VRWM
IR(Vcc to Vss)
IR(IO to Vss)
VBR
VF
VC_Vcc
VC_I/O
VESD_Vcc
VESD_I/O
RDIF_Vcc
RDIF_I/O
CI/O to VSS
ΔCI/O
Min
—
—
—
6.2
-1.0
—
—
—
—
—
—
—
—
Typ
—
—
—
—
-0.8
6.3
7.7
6.8
9
0.1
0.25
0.65
0.02
Max
5.0
1.0
0.5
—
—
—
9
—
—
—
—
0.8
—
Unit
V
μA
μA
V
V
V
V
V
V
Ω
Ω
pF
pF
Test Conditions
VCC to VSS
VR = VRWM = 5V, VCC to VSS
VR = VRWM = 5V, any I/O to VSS
IR = 1mA, VCC to VSS
IF = -15mA, VCC to VSS
IPP = 9A, VCC to VSS, 8/20 μs
IPP = 6A, I/O to VSS, 8/20 μs
TLP, 10A, tp = 100 ns, VCC to VSS, per Fig. 8
TLP, 10A, tp = 100 ns, I/O to VSS, per Fig. 8
TLP, 10A, tp = 100 ns, VCC to VSS
TLP, 10A, tp = 100 ns, I/O to VSS
VR = 2.5V, VCC = 5V, f = 1MHz
VCC = 5V, VSS = 0V, I/O = 2.5V, f = 1MHz,
T = +25°C , I/O_x to VSS – I/O_y to VSS
Notes:
5. Device mounted on Polymide PCB pad layout (2oz copper) as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform.
DT1042-04TS
Document number: DS36673 Rev. 2 - 2
2 of 5
www.diodes.com
June 2014
© Diodes Incorporated
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