1N6142A 반도체 회로 부품 판매점
QPL 1500 Watt Axial Leaded TVS
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 Semtech Corporation |
QPL
1500 Watt Axial Leaded TVS
1N6138A
Thru
1N6173A
TEL:805-498-2111 FAX:805-498-3804
DESCRIPTION
The 1N61xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using two p-n junction TVS diodes in a back-to-
back configuration, hermetically sealed in a voidless glass
package. The hermetically sealed package provides high
reliability in harsh environmental conditions. TVS diodes
are further characterized by their high surge capability, low
operating and clamping voltages, and a theoretically
instantaneous response time. This makes them ideal for
use as board level protection for sensitive semiconductor
components.
FEATURES:
• 1500 Watts Peak Pulse Power (tp = 10/1000µs)
• Voidless hermetically sealed glass package
• Metallurgically bonded
• High surge capacity
• Military & Industrial applications
• Available in JAN, JTX, and JTXV versions per
MIL-S-19500/516
MECHANICAL CHARACTERISTICS:
• Hermetically sealed glass package
• Tinned copper leads
• Marking : P/N, date code, logo
MAXIMUM RATINGS
RATING
Peak Pulse Power (tp = 10 x 1000µs)
Operating Temperature
Storage Temperature
Steady-State Power Dissipation @ TL = 75ºC (3/8”)
SYMBOL
Ppk
Tj
Tstg
PD
VALUE
1500
-65 to +175
-65 to +175
5
UNIT
Watts
°C
°C
Watts
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
1N6138A
1N6139A
1N6140A
1N6141A
1N6142A
1N6143A
1N6144A
1N6145A
1N6146A
1N6147A
1N6148A
1N6149A
1N6150A
1N6151A
1N6152A
1N6153A
1N6154A
1N6155A
1N6156A
1N6157A
1N6158A
1N6159A
1N6160A
1N6161A
1N6162A
1N6163A
1N6164A
1N6165A
1N6166A
1N6167A
1N6168A
1N6169A
1N6170A
1N6171A
1N6172A
1N6173A
REVERSE
STAND-OFF
VOLTAGE
VRWM
(V)
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
REVERSE
LEAKAGE
CURRENT
IR
(µA)
500
300
100
100
100
20
20
20
20
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ IT
(V)
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152.0
171.0
190.0
TEST
CURRENT
IT
(mA)
175
175
150
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
(V)
10.5
11.2
12.1
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.
PEAK PULSE
CURRENT
Ipp
tp = 1mS
(A)
142.8
133.9
124.0
111.9
103.4
96.2
88.8
82.4
71.4
67.3
59.8
54.2
49.2
45.0
40.1
36.0
32.8
30.1
28.0
25.4
23.2
21.4
19.5
17.6
15.4
14.5
13.3
12.0
10.9
9.9
9.1
8.4
7.3
6.9
6.1
5.5
TEMPERATURE
COEFFICIENT
OF VBR
αVz
% / °C
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.085
0.085
0.085
0.09
0.09
0.09
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.105
0.105
0.105
0.110
0.110
MAXIMUM
REVERSE
LEAKAGE
CURRENT (Ir2)
TA=+150°C
(A)
12000
3000
2000
1200
800
800
600
600
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
© 1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
QPL
1500 Watt Axial Leaded TVS
1N6138A
Thru
1N6173A
PEAK PULSE POWER vs. PULSE TIME
TEL:805-498-2111 FAX:805-498-3804
10x1000µs IMPULSE WAVEFORM
100
10
1
0.1
0.1
1
10
100
1000
10000
Pulse Duration (us)
STEADY STATE DERATING CHARACTERISTICS
FOR FREE AIR MOUNTING
3.5
3
2.5
2
MAX. POWER (W)
1.5
1
0.5
0
0
20 40 60 80 100 120 140 160 180
AMBIENT TEMPERATURE (TA) IN degC
MECHANICAL OUTLINE
PULSE DERATING CURVE
100
Pp or
Ipp in %
of max
ratings
60
40
20
00
Pulse conditions as
defined by 10 X 1000us
impulse waveform
40 80 120 160 200
Tj (oC)
SCHEMATIC
B DIMENSIONS
A
DIM N
INCHES
MM NOTE
MIN MAX MIN MAX
A 0.135 0.185
3.40 4.70
C B 0.900 1.300 22.86 33.02
C 0.140 0.255 3.5
6.6
2
D 0.036 0.042 0.91
1.07
DB
NOTES :
1. Controlling dimension is inches.
2. Includes uncontrolled area of device leads.
© 1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
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1N6142A diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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