1N916A 반도체 회로 부품 판매점
High Conductance Fast Diode
|
|
 National Semiconductor |
N
Discrete POWER & Signal
Technologies
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
DO-35
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
COLOR BAND MARKING
DEVICE 1ST BAND 2ND BAND
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
BLACK
BLACK
BROWN
BLACK
BLACK
BROWN
BLACK
BROWN
BROWN
GRAY
BLACK
RED
WHITE
BROWN
BROWN
BLACK
High Conductance Fast Diode
Sourced from Process D3.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
75
200
300
400
1.0
4.0
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
1N/FDLL 914/A/B / 4148 / 4448
500
3.33
300
Units
mW
mW/°C
°C/W
High Conductance Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BV
IR
VF
CO
TRR
Parameter
Test Conditions
Breakdown Voltage
Reverse Current
Forward Voltage 1N914B / 4448
1N916B
1N914 / 916 / 4148
1N914A / 916A
1N916B
1N914B / 4448
Diode Capacitance
1N916/A/B / 4448
1N914/A/B / 4148
Reverse Recovery Time
IR = 100 µA
IR = 5.0 µA
VR = 20 V
VR = 20 V, TA = 150°C
VR = 75 V
IF = 5.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 20 mA
IF = 30 mA
IF = 100 mA
VR = 0, f = 1.0 MHz
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V (60 mA),
Irr = 1.0 mA, RL = 100 Ω
Min
100
75
620
630
Max
25
50
5.0
720
730
1.0
1.0
1.0
1.0
Units
V
V
nA
µA
µA
mV
mV
V
V
V
V
2.0 pF
4.0 pF
4.0 nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
160 Ta= 25°C
150
140
130
120
110
1
23 5
10 20 30 50
IR - REVERSE CURRENT (uA)
100
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
120
Ta= 25°C
100
80
60
40
20
0
10
20 30
50 70
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
550
Ta= 25°C
500
450
400
350
300
250
1
23 5
10 20 30 50
IF - FORWARD CURRENT (uA)
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 100 mA
750 Ta= 25°C
700
650
600
550
500
450
0.1
0.2 0.3 0.5
1
23 5
I F - FORWARD CURRENT (mA)
10
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: National Semiconductor
( national )
1N916A diode
데이터시트 다운로드 :
[ 1N916A.PDF ]
[ 1N916A 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
1N916
High Conductance Fast Diode - National Semiconductor
1N916
Small Signal Diode - Fairchild Semiconductor
1N916
SWITCHING RECTIFIERS - Digitron Semiconductors
1N916
Silicon Switching Diode - Texas
1N916
High-speed diodes - Philips
1N916
HIGH CONDUCTANCE FAST DIODES - SEMTECH
1N916
500mW 100 Volt Small Signal Diodes - MCC
1N916A
HIGH CONDUCTANCE FAST DIODES - SEMTECH
1N916A
High Conductance Fast Diode - National Semiconductor