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Littelfuse |
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SRDA3.3 Series
SRDA3.3 Series 8pF 35A Diode Array
RoHS Pb GREEN
Description
The SRDA3.3 integrates low capacitance rail-to-rail diodes
with an additional zener diode to protect I/O pins against
ESD and lightning induced surge events. This device can
safely absorb up to 35A per IEC61000-4-5 (tp=8/20μs)
without performance degradation and a minimum
±30kV ESD per IEC61000-4-2 international standard. Its
low loading capacitance makes it ideal for high-speed
interfaceprotection.
Pinout
I/O 1 1
Ref 1 2
8 Ref 2
7 I/O 4
Ref 1 3
6 I/O 3
I/O 2 4
5 Ref 2
SOIC-8 (Top View)
Note: Pinout diagrams above shown as device footprint on circuit board.
Functional Block Diagram
I/O 1 Ref 1
I/O 2
I/O 4 Ref 2 I/O 3
Features
• Lightning protection,
IEC61000-4-5, 35A
(8/20μs)
• EFT, IEC61000-4-4, 50A
(5/50ns)
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• Low clamping voltage
• Low leakage current
• SOIC-8 surface mount
package (JEDEC MS-012)
Applications
• Tertiary (IC Side)
Protection:
- T1/E1/T3/E3
- HDSL/SDSL
- Ethernet
• RS232, RS485
Application Example
R Tip
• Video Line Protection
• Security Cameras
• Storage DVRs
• Network Equipment
• Instrumentation, Medical
Equipment
R Ring
T1/E1/ T 3 / E 3
Transceiver
T Tip
85
SRDA3.3-4
14
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
©2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com for current information.
1
Revision: June 14, 2013
T Ring
T1/E1/T3/E3 Interface Protection
SRDA3.3 Series
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SRDA3.3 Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
P
pk
I
pp
Top
TSTOR
Peak Pulse Power (8/20μs)
Peak Pulse Current (8/20μs)
Operating Temperature
Storage Temperature
600
35
-40 to 125
-55 to 150
W
A
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Thermal Information
Parameter
SOIC Package
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
Rating
170
-40 to 125
-55 to 150
150
260
Units
°C/W
°C
°C
°C
°C
Electrical Characteristics (TOP = 25°C)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Stand-Off Voltage
VRWM
IT≤1μA
- - 3.3 V
Reverse Breakdown Voltage
VBR
IT =2uA
3.5 -
-V
Snap Back Voltage
VSB IT=50mA
2.9 -
-V
Reverse Leakage Current
IR
VR= 3.3V
- - 1 μA
Clamping Voltage, Line-Ground1
VC
IPP= 1A, tp=8/20 μs
- 5.7 - V
Clamping Voltage, Line-Ground1
VC
IPP= 10A, tp=8/20 μs
- 10.1
-
V
Clamping Voltage, Line-Ground1
VC
IPP= 30A, tp=8/20 μs
- 17.7
-
V
Dynamic Resistance, Line-Ground1 R
DYN
( V -V )/(I -I )
C2 C1 PP2 PP1
- 0.5 - Ω
ESD Withstand Voltage1
IEC61000-4-2 (Contact Discharge)
VESD IEC61000-4-2 (Air Discharge)
±30
±30
-
-
- kV
- kV
Diode Capacitance1
CI/O-I/O
C
I/O-GND
Reverse Bias=0V
Reverse Bias=0V
- 4.0 - pF
- 8.0 - pF
1 Parameter is guaranteed by design and/or device characterization.
Normalized Capacitance vs. Bias Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3
Bias Voltage (V)
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tp(μS)
1000
SRDA3.3 Series
2
Revision: June 14, 2013
©2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
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