LBAT54ALT1 반도체 회로 부품 판매점
SCHOTTKY BARRIER DIODE
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 Leshan Radio Company |
LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
ORDERING INFORMATION
Device
LBAT54ALT1
LBAT54ALT1G
Package
SOT–23
SOT–23
Shipping
3000/Tape & Reel
3000/Tape & Reel
DEVICE MARKING
LBAT54ALT1 = B6
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T A = 25°C
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
Symbol
VR
PF
IF
TJ
T stg
Max Unit
30 Volts
225
1.8
200Max
125Max
–55 to +150
mW
mW/°C
mA
°C
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V(BR)R
CT
IR
VF
VF
VF
trr
VF
VF
IF
IFRM
IFSM
Min Typ
30 —
— 7.6
— 0.5
— 0.22
— 0.41
— 0.52
——
— 0.29
— 0.35
——
——
——
LBAT54ALT1
30 VOLTS SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
SOT–23 (TO–236AB)
3
ANODE
CATHODE
1
2
CATHODE
Max
—
10
2.0
0.24
0.5
1.0
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
5.0 ns
0.32 Vdc
0.40 Vdc
200 mAdc
300 mAdc
600 mAdc
LBAT54ALT1-1/3
LESHAN RADIO COMPANY, LTD.
+10 V 820 Ω 2.0 k
100 µH
IF
0.1µF
tr tp
10%
t
0.1 µF
50 Ω OUTPUT
PULSE
GENERATOR
D.U.T.
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
V R INPUT SIGNAL
IF
IR
LBAT54ALT1
t rr t
i = 1.0 mA
R(REC)
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10 150°C
125°C
1.0
85°C
25°C – 40°C
–55°C
0.1
0
0.1
0.2 0.3 0.4
0.5
VF , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.6
1000
100
T A = 150°C
10
T A = 125°C
1.0
T A = 85°C
0.1
0.01
0.001
0
T A = 25°C
5
10 15
20 25
VR , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
30
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR , REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
LBAT54ALT1-2/3
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제조업체: Leshan Radio Company
( lrc )
LBAT54ALT1 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
LBAT54ALT1
SCHOTTKY BARRIER DIODE - Leshan Radio Company
LBAT54ALT1G
SCHOTTKY BARRIER DIODE - Leshan Radio Company