DPG30C200HB 반도체 회로 부품 판매점
High Performance Fast Recovery Diode
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 IXYS |
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG30C200HB
1 23
DPG30C200HB
VRRM
I FAV
t rr
= 200 V
= 2x 15 A
= 35 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG30C200HB
Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 200 V
VR = 200 V
forward voltage drop
IF = 15 A
IF = 30 A
IF = 15 A
IF = 30 A
average forward current
TC = 145°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 150 V f = 1 MHz
t rr reverse recovery time
IF = 15 A; VR = 130 V
-diF/dt = 200 A/µs
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max.
200
200
1
0.08
1.25
1.50
1.00
1.27
15
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
0.25
20
3
6.5
35
55
0.69 V
17.3 mΩ
1.7 K/W
K/W
90 W
240 A
pF
A
A
ns
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
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제조업체: IXYS
( ixys )
DPG30C200HB diode
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[ DPG30C200HB.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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