VS-HFA140FA60 반도체 회로 부품 판매점
Ultrafast Soft Recovery Diode
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 Vishay |
www.vishay.com
VS-HFA140FA60
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 140 A
SOT-227
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC, per module
IF(AV) at TC, per module
Package
600 V
1.33 V
43 ns
140 A at 110 °C
140 A at 96 °C
SOT-227
DESCRIPTION/APPLICATIONS
The dual diode series configuration VS-HFA140FA60 is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as power supplies, battery chargers electronic welders,
motor control and inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Continuous forward current
per leg
per module
VR
IF
Single pulse forward current
IFSM
Maximum power dissipation, per leg
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 110 °C
TJ = 25 °C
TC = 25 °C
TC = 110 °C
Any terminal to case, t = 1 minute
MAX.
600
70
140
600
357
114
2500
- 55 to 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 μA
600
IF = 60 A
-
Forward voltage, per leg
IF = 120 A
VFM
IF = 60 A, TJ = 125 °C
-
-
IF = 60 A, TJ = 150 °C
-
VR = VR rated
-
Reverse leakage current, per leg
IRM
TJ = 125 °C, VR = VR rated
-
TJ = 150 °C, VR = VR rated
-
TYP.
-
1.33
1.56
1.24
1.19
2.5
0.8
3
MAX.
-
1.70
2.04
-
-
20
2
9
UNITS
V
μA
mA
Revision: 23-Jul-13
1 Document Number: 93992
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-HFA140FA60
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time, per leg
Peak recovery current, per leg
Reverse recovery charge, per leg
Junction capacitance, per leg
trr
IRRM
Qrr
CT
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 50 A
dIF/dt = - 200 A/μs
VR = 200 V
TJ = 125 °C
VR = 600 V
-
-
-
-
-
-
-
-
43
90
150
9.5
17
400
1180
67
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both legs conducting
RthJC
Case to heatsink
Weight
RthCS
Flat, greased surface
Mounting torque
Case style
MIN.
-
-
-
-
-
TYP. MAX.
- 0.35
- 0.175
0.05 -
30 -
- 1.3
SOT-227
UNITS
°C/W
g
Nm
Revision: 23-Jul-13
2 Document Number: 93992
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-HFA140FA60 diode
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