SP3012-04UTG 반도체 회로 부품 판매점
TVS Diode Arrays
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 Littelfuse |
TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP3012 Series
SP3012 Series 0.5pF Diode Array for USB3.0
RoHS Pb GREEN
Pinout
4 56
*Pins 6, 7, 9, 10 are not internally connected
but should be connected to the trace.
678
9 10
321
SP3012-03UTG
543
21
SP3012-04UTG (AEC-Q101 Qualified)
65
4
8 14
71
SP3012-06UTG (AEC-Q101 Qualified)
*Pins 1, 2, 3, 4, 5, 6, 7 are not internally connected
but should be connected to the opposite pin
with the PCB trace.
12
SP3012-04HTG
Functional Block Diagram
SP3012-03UTG
SP3012-06UTG
PIN 1
PIN 4
PIN 5
PIN 11
PIN 12
PIN 13
PIN 14
3
PIN 8
PIN 9
GND (PIN 2)
SP3012-04UTG
PIN 10
SP3012-04HTG
PIN 1
PIN 2
PIN 4
PIN 5
PIN 1
PIN 3
PIN 4
PIN 6
GND (PIN 3, 8)
Additional Information
GND (PIN 2)
Description
The SP3012 Series integrates either 3, 4 or 6 channels of
ultra low capacitance rail-to-rail diodes and an additional
zener diode to provide protection for electronic equipment
that may experience destructive electrostatic discharges
(ESD). These robust devices can safely absorb repetitive
ESD strikes above the maximum level specified in the
IEC61000-4-2 international standard (±8kV contact
discharge) without performance degradation.
The extremely low loading capacitance also makes it ideal
for protecting high speed signal lines such as USB3.0,
HDMI, USB2.0, and eSATA.
Features
• ESD, IEC61000-4-2,
±12kV contact, ±25kV air
• EFT, IEC61000-4-4, 40A
(tP=5/50ns)
• Lightning, IEC61000-4-5,
4A (tP=8/20μs)
• Low capacitance of 0.5pF
(TYP) per I/O
• Low leakage current of
1.5μA (MAX) at 5V
• Small form factor μDFN
(JEDEC MO-229) and
SOT23-6 (JEDEC MO-
178AB) packages provide
flow through routing to
simplify PCB layout
• AEC-Q101 Qaulified
(μDFN10 and μDFN14)
Applications
• LCD/PDP TVs
• External Storages
• DVD/Blu-ray Players
• Desktops
• MP3/PMP
• Set Top Boxes
• Smartphones
• Ultrabooks/Notebooks
• Digital Cameras
Application Example for USB3.0
USB Port
VBUS
USB Controller
SSTX+
SSTX-
SSRX+
SSRX-
GND
D+
D-
SP3012-06UTG
IC
Signal GND
Datasheet
Resources
Samples
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/21/14
TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP3012 Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
IPP
TOP
TSTOR
Peak Current (tp=8/20μs)
Operating Temperature
Storage Temperature
4.0
-40 to 125
-55 to 150
A
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance
ESD Withstand Voltage1
VRWM
ILEAK
VC
RDYN
VESD
IR ≤ 1µA
VR=5V, Any I/O to GND
IPP=1A, tp=8/20µs, Fwd
IPP=2A, tp=8/20µs, Fwd
(VC2 - VC1) / (IPP2 - IPP1)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Diode Capacitance1
Diode Capacitance1
CI/O-GND
CI/O-/O
Reverse Bias=0V, f=1 MHz
Reverse Bias=0V, f=1 MHz
Note: 1 Parameter is guaranteed by design and/or device characterization.
Min
±12
±25
Typ
6.6
7.0
0.4
0.5
0.3
Capacitance vs. Bias Voltage
Insertion Loss (S21) I/O to GND
Max
5.0
1.5
7.9
8.4
0.65
0.4
1.0
0.8
0.6
0.4
0.2
0.0
0.0 1.0 2.0 3.0 4.0 5.0
Bias Voltage (V)
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10 10
100
Frequency (MHz)
1000
Clamping Voltage vs. IPP
10.0
8.0
6.0
4.0
2.0
0.0 1
2
Current (A)
3
© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/21/14
4
Transmission Line Pulsing(TLP) Plot
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1 2 3 4 5 6 7 8 9 10 11
TLP Voltage (V)
Units
V
µA
V
V
Ω
kV
kV
pF
pF
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( littelfuse )
SP3012-04UTG diode
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