파트넘버.co.kr FMG-23R 데이터시트 PDF


FMG-23R 반도체 회로 부품 판매점

10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode



Thinki Semiconductor 로고
Thinki Semiconductor
FMG-23R 데이터시트, 핀배열, 회로
FMG22R thru FMG24R
®
FMG22R thru FMG24R
Pb Free Plating Product
Pb
10.0 Ampere Dual Unipolar/Common Anode Polarity Ultrafast Recovery Diode
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverter/Converter)
Plating Power Supply,UPS and Adaptor
Car Audio Amplifier and Sound Device System
Mechanical Data
Glass passivated chip junction
Case:TO-220F insulated package type
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: "S" "R" "U" type( As marked )
Mounting position: Any
Weight: 2.2 gram approximately
ELECTRICAL CHARACTERISTICS
Parameter
Type No.
VRM
(V)
Absolute Maximum Ratings
IF (AV) (A)
With
Heatsink
IFSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
Tstg
(°C)
VF
(V)
max per IF
element (A)
Electrical Characteristics (Ta=25°C)
IR
(mA)
IR (H)
(mA)
trr Œ
(ns)
trr 
(ns)
VR =VRM VR=VRM, Ta=100°C
max per element max per element
IF/IRP
(mA)
IF/IRP
(mA)
Others
Rth ( j-c) Mass
(°C/ W) (g)
Fig.
FMG22R
FMG-22R
200
65
0.98
0.25
1.0 40
30
FMG23R
FMG-23R
300
10.0
–40 to +150
5.0
FMG24R
FMG-24R
400
70
1.30
0.1
0.5
100/100
100/200 4.0
2.1 A
50 35
0.2
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
Fig. A
3.3
10.0
4.2
2.8
C 0.5
Internal Configurations
2.54
1.35
0.85
0.45
+0.2
–0.1
2.54
2.4
Case
Positive CT
Common Cathode
Suffix "S"
Case
Negative CT
Common Anode
Suffix "R"
Case
Doubler
Series Connection
Suffix "U"
ITO-220AB/TO-220F/TO-220FH/TO-220FG/TO-220FB
TO-220 Fully Isolated/Insulated Plastic Package Outline
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
http://www.Datasheet4U.com


FMG-23R 데이터시트, 핀배열, 회로
FMG22R thru FMG24R
®
RATINGS AND CHARACTERISTIC CURVES (FMG22R thru FMG24R)
FMG22S/FMG22R/FMG22U
Tc —IF(AV) Derating
10
t/T= 1/2
8
t /T= 1/6
D.C.
6
t /T= 1/ 3, Sinewave
4
2
FMG-22S/FMG-22R/FMG-22U
VF—IF Characteristics (Typical)
20
10
1
0.1
0.01
Ta = 150ºC
100ºC
60ºC
25ºC
0
60 80 100 120 140 160
Case Temperature Tc (°C)
FMG23S/FMG23R/FMG23U
Tc —IF(AV) Derating
10
t/T= 1/2
8
6 t /T= 1/6
D.C.
t /T= 1/ 3, Sinewave
4
2
0.001
0.1
0.3 0.5 0.7
0.9 1.1
Forward Voltage VF (V)
1.3
FMG-23S/FMG-23R/FMG-23U
VF—I F Characteristics (Typical)
30
10
1
0.1
0.01
Ta = 150ºC
100ºC
60ºC
25ºC
0
70 90 110 130 150
Case Temperature Tc (°C)
FMG24S/FMG24R/FMG24U
Tc —IF(AV) Derating
10
8
6 t /T= 1/6
t/T= 1/2
D.C.
t /T= 1/ 3, Sinewave
4
2
0.001
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Forward Voltage VF (V)
FMG-24S/FMG-24R/FMG-24U
VF—I F Characteristics (Typical)
30
10
1
0.1
0.01
Ta = 150ºC
100ºC
60ºC
25ºC
0
70
90
110 130
150
Case Temperature Tc (°C)
0.001
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Forward Voltage VF (V)
IFMS Rating
65
60
50
20ms
40
30
20
10
0
1 5 10
Overcurrent Cycles
50
IFMS Rating
70
60 20ms
50
40
30
20
10
0
1 5 10
Overcurrent Cycles
50
IFMS Rating
70
60 20ms
50
40
30
20
10
0
1 5 10
Overcurrent Cycles
50
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/




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