HFB06TB120 반도체 회로 부품 판매점
Ultrafast/ Soft Recovery Diode
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 International Rectifier |
Bulletin PD -2.382 rev. D 12/00
HEXFREDTM
HFA06TB120
Ultrafast, Soft Recovery Diode
Features
• UltrafastRecovery
• UltrasoftRecovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• HigherFrequencyOperation
• ReducedSnubbing
• Reduced Parts Count
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
VR = 1200V
VF(typ.)* = 2.4V
IF(AV) = 6.0A
Qrr (typ.)= 116nC
IRRM(typ.) = 4.4A
trr(typ.) = 26ns
di(rec)M/dt (typ.)* = 100A/µs
Description
International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
6 amps continuous current, the HFA06TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
count and heatsink sizes. The HEXFRED HFA06TB120 is ideally suited for applications
in power supplies and power conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
Max.
1200
8.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
1
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
Cathode Anode Breakdown
1200 ––– –––
V IR = 100µA
Voltage
VFM Max. Forward Voltage
––– 2.7 3.0
IF = 6.0A
––– 3.5 3.9 V IF = 12A
––– 2.4 2.8
IF = 6.0A, TJ = 125°C
IRM
Max. Reverse Leakage Current ––– 0.26 5.0
µA
VR = VR Rated
––– 110 500
TJ = 125°C, VR = 0.8 x VR RatedD R
CT Junction Capacitance
––– 9.0 14
pF VR = 200V Rated
LS Series Inductance
––– 8.0 ––– nH Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr Reverse Recovery Time
trr1
trr2
IRRM1
Peak Recovery Current
IRRM2
Qrr1 Reverse Recovery Charge
Qrr2
di(rec)M/dt1 Peak Rate of Recovery
di(rec)M/dt2 Current During tb
––– 26 –––
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 53 80 ns TJ = 25°C
––– 87 130
TJ = 125°C
IF = 6.0A
––– 4.4 8.0 A TJ = 25°C
––– 5.0 9.0
TJ = 125°C
VR = 200V
––– 116 320
TJ = 25°C
nC
––– 233 585
TJ = 125°C
dif/dt = 200A/µs
––– 180 –––
TJ = 25°C
A/µs
––– 100 –––
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead !
Lead Temperature
RthJC
Thermal Resistance, Junction to Case
RthJA "
Thermal Resistance, Junction to Ambient
RthCS$
Thermal Resistance, Case to Heat Sink
Wt Weight
Mounting Torque
Min.
––––
––––
––––
––––
––––
––––
6.0
5.0
Typ.
––––
––––
––––
0.5
2.0
0.07
––––
––––
Max.
300
2.0
80
––––
––––
––––
12
10
Units
°C
K/W
g
(oz)
Kg-cm
lbf•in
! 0.063 in. from Case (1.6mm) for 10 sec
"#Typical Socket Mount
$ Mounting Surface, Flat, Smooth and Greased
2
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( ir )
HFB06TB120 diode
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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