TEMD5110 반도체 회로 부품 판매점
Silicon PIN Photodiode
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 Vishay Semiconductors |
Silicon PIN Photodiode
Description
TEMD5110 is a high speed and high sensitive PIN
photodiode. It is a miniature Surface Mount Device
(SMD) including the chip with a 7.5 mm2 sensitive
area and an infrared bandpass filter matched to IR
Emitters operating at wavelength 870 nm or 950 nm.
TEMD5110
Vishay Semiconductors
www.DataSheet4U.com
Features
• Large radiant sensitive area (A = 7.5
mm2)
• Wide angle of half sensitivity ϕ = ± 65 °
• High photo sensitivity
e4
• Fast response times
• Small junction capacitance
• Plastic package with IR filter (λ = 870...950 nm)
• Lead-free component
• Component in accordance to ELV 2000/53/EC,
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Power Dissipation
Junction Temperature
Tamb ≤ 25 °C
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
t≤3s
Thermal Resistance Junction/
Ambient
Symbol
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
60
215
100
- 40 to + 100
- 40 to + 100
260
350
Unit
V
mW
°C
°C
°C
°C
K/W
Document Number 84658
Rev. 1.0, 08-Mar-05
www.vishay.com
1
TEMD5110
Vishay Semiconductors
www.DataSheet4U.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
IF = 50 mA
VF 1 1.3 V
IR = 100 µA, E = 0
V(BR)
60
V
VR = 10 V, E = 0
Iro
2 30 nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25 40 pF
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
Symbol
Vo
TKVo
Ik
TKIk
Ira
ϕ
λp
λ0.5
NEP
tr
tf
Min Typ. Max
350
-2.6
50
0.1
45 55
± 65
940
790 to 1050
4 x 10-14
100
100
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
1.4
Unit
mV
mV/K
µA
%/K
µA
deg
nm
nm
W/√ Hz
ns
ns
100
10
1
20
94 8403
VR = 10 V
40 60 80 100
Tamb - Ambient Temperature ( ° C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2 VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20 40 60 80 100
Tamb - Ambient Temperature ( ° C )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
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Document Number 84658
Rev. 1.0, 08-Mar-05
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PDF 파일 내의 페이지 : 총 7 페이지
제조업체: Vishay Semiconductors
( vishays )
TEMD5110 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
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