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Cystech Electonics |
CYStech Electronics Corp.
Advanced Schottky Barrier Diodes
ASD723SN
wSpwewc..DNao.ta: SCh3e4e3tS4NU.com
Issued Date : 2003.08.19
Revised Date :2003.12.05
Page No. : 1/4
Features:
● Designed for mounting on small surface
● Low stored charge
● Majority carrier conduction
Mechanical data:
● Case: 0805(2012) Standard package, molded plastic
● Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
● Polarity: Indicated by cathode band
● Mounting position: Any
● Weight: 4.8mg (approximately)
Absolute Maximum Ratings(Ta=25℃)
Characteristics
Continuous Reverse Voltage
Average Rectified Current
Forward Surge Current @ 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Capacitance between Terminals @ f=1MHz and applied
10VDC Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
VR
IO
IFSM
CT
Tj
Tstg
Value
30
200
1.5
20
-40 to +125
-40 to +125
Unit
V
mA
A
pF
°C
°C
Electrical Characteristics ( TA=25°C, unless otherwise noted)
Parameter
Forward Voltage
Reverse Current
Condition
IF = 200mADC
VR = 30VDC
Symbol Min Typ Max
VF - - 0.55
IR - - 15
Unit
V
µA
ASD723SN
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
wSpwewc..DNao.ta: SCh3e4e3tS4NU.com
Issued Date : 2003.08.19
Revised Date :2003.12.05
Page No. : 2/4
Forward Current Derating Curve
120
100 M ounting on glass
epoxy PCBs
80
60
Forward Current vs Forward Voltage
100
125℃
10
75℃
40
20
0
0 25 50 75 100 125 150
Ambient Temperature---TA(℃)
Reverse Leakage Current vs Reverse Voltage
10
1
0
100
25℃
- 25℃
0.1 0.2 0.3 0.4 0.5
Forward Voltage---VF(V)
0.6
Capacitance vs Reverse Voltage
1
125℃
0.1
75℃
0.01
10
0.001
0.0001
0
25℃
10 20 30
Reverse Voltage---VR(V)
40
1
0 5 10 15 20 25 30 35
Reverse Voltage---VR(V)
ASD723SN
CYStek Product Specification
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