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Sanken electric |
Schottky Barrier Diode
FMEN-210A
www.DataSheet4U.com
March, 2006
■General Description
FMEN-210A is a High Voltage (100V) Schottky Barrier
Diode, and has achieved low leakage current and low VF by
selecting the best barrier metal.
■Package---TO220F
■Applications
• DC-DC converters
• AC adapter
• High frequency rectification circuit
■Features
• High Voltage 100V guaranteed.
• Steady operation is possible even at the high temperature
by the low leakage current.
• Super-high speed & low switching noise.
• Low forward voltage drop.
■Key Specifications
Item
VRM
VF
IF(AV)
Unit
V
V
A
Rating
100
0.85
10
Conditions
IF=5.0A
1.0E+02
1.0E+01
1.0E+00
IF-VF Characteristics
Typical Characteristics
1.0E-02
1.0E-03
1.0E-04
VR-IR Charcteristics
Tj=150℃
Tj=125℃
Tj=100℃
1.0E-01
1.0E-02
150℃
125℃
100℃
25℃
1.0E-05
1.0E-06
Tj=25℃
1.0E-03
0
0.5
VF (V)
1
1.0E-07
1.5 0 10 20 30 40 50 60 70 80 90 100
VR (V)
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
D01-009EA-060310
1/7
Schottky Barrier Diode
FMEN-210A
www.DataSheet4U.com
March, 2006
Absolute maximum ratings
No. Parameter
Symbol
1 Transient Peak Reverse Voltage
2 Peak Reverse Voltage
3 Average Forward Current
4 Peak Surge Forward Current
5 I2t Limiting Value
VRSM
VRM
IF(AV)
IFSM
I2t
6 Junction Temperature
Tj
7 Storage Temperature
Tstg
No.1,2,4&5 show ratings per one chip.
Unit
V
V
A
A
A2s
°C
°C
Rating
100
100
10
100
50
-40 to +150
-40 to +150
Conditions
Half sinewave, one shot
1msec ≤ t ≤ 10msec
Electrical characteristics(Ta=25°C,unless otherwise specified)
No.
Parameter
Symbol Unit
Value
1 Forward Voltage Drop
VF V
2 Reverse Leakage Current
3
Reverse Leakage Current Under
High Temperature
IR
H•IR
uA
mA
4 Thermal Resistance
Rth(j-c)
°C/W
No.1,2,&3 show characteristics per one chip.
0.85 max.
100 max.
50 max.
4.0 max.
Conditions
IF=5.0A
VR=VRM
VR=VRM, Tj=150°C
Between Junction and case
Sanken Electric Co.,Ltd.
2/7
D01-090EA-060310
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