STPSC1006 반도체 회로 부품 판매점
Schottky Barrier 600 V power Schottky silicon carbide diode
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 ST Microelectronics |
www.DataSheet4U.com
STPSC1006
600 V power Schottky silicon carbide diode
Features
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A
K
TO-220AC
STPSC1006D
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
QC (typ)
10 A
600 V
175 °C
12 nC
September 2009
Doc ID 16287 Rev 1
1/7
www.st.com
7
Characteristics
1 Characteristics
www.DSatTaPShSeCe1t40U0.c6om
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
IFSM
IFRM
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward
current
Repetitive peak forward current
Storage temperature range
Tc = 115 °C, δ = 0.5
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
δ = 0.1, TC = 110 °C,
Tj = 150 °C
Operating junction temperature
600
18
10
40
32
160
40
-55 to +175
-40 to +175
V
A
A
A
A
°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
2 °C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Min. Typ. Max.
Unit
IR (1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 150 °C
-
-
VF (2) Forward voltage drop
Tj = 25 °C
IF = 10 A
Tj = 150 °C
-
-
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.09 x IF2(RMS)
30 150
210 1500
1.4 1.7
1.6 2.1
µA
V
Table 5.
Symbol
Other parameters
Parameter
Test conditions
Typ. Unit
Qc
Total capacitive charge
Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs
Tj = 150 °C
C Total capacitance
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
Vr = 400 V, Tc = 25 °C, F = 1 Mhz
12
650
50
nC
pF
2/7 Doc ID 16287 Rev 1
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STPSC1006 diode
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관련 데이터시트
STPSC1006
Schottky Barrier 600 V power Schottky silicon carbide diode - ST Microelectronics
STPSC1006D
600 V power Schottky silicon carbide diode - STMicroelectronics