BAT54N3 반도체 회로 부품 판매점
Small Signal Schottky diodes
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 Cystech Electonics |
www.datasheet4u.com
CYStech Electronics Corp.
Small Signal Schottky (double) diodes
BAT54N3/BAT54AN3
BAT54CN3/BAT54SN3
Spec. No. : C302N3-H
Issued Date : 2003.04.14
Revised Date :
Page No. : 1/4
Description
Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
•Very small conduction losses
•Low forward voltage drop
•Small plastic SMD package
Applications
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes
Pinning
Pin
BAT54
1A
2 NC
3K
Description
BAT54A BAT54C
K1 A1
K2 A2
A1,A2
K1,K2
BAT54S
A1
K2
K1,A1
Outline
SOT-23
3
33
1
(1) BAT54
3
2
N.C.
1
(2)BAT54A
3
1 21
(3)BAT54C
(4)BAT54S
Diode configuration and symbol
2
2
BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3
12
Marking:
Type
BAT54 N3
BAT54AN3
BAT54CN3
BAT54SN3
Marking Code
L4
L42
L43
L44
CYStek Product Specification
www.datasheet4u.com
CYStech Electronics Corp.
Spec. No. : C302N3-H
Issued Date : 2003.04.14
Revised Date :
Page No. : 2/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -65~+150 °C
Junction Temperature Tj .............................................................................................................. +125°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 230 mW
• Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage VRRM .............................................................................................. 30 V
Continuous Forward Current IF ................................................................................................... 200 mA
Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA
Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA
Note:for double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 1)
Reverse Leakage Current (Note 2)
Diode Capacitance
Reverse Recovery Time
Symbol
VBR
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CD
trr
Condition
IR=100µA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V,Tj=25℃
VR=1V, f=1MHz
IF=IR=10mA RL=100Ω
measured at IR=1mA
Notes: 1.pulse test, tp=380µs,duty cycle<2%.
2.pulse test, tp=5ms,duty cycle<2%.
Min. Max. Unit
30 - V
- 240 mV
- 320 mV
- 400 mV
- 500 mV
- 800 mV
- 2 µA
- 10 pF
- 5 ns
BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3
CYStek Product Specification
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제조업체: Cystech Electonics
( cystech )
BAT54N3 diode
데이터시트 다운로드 :
[ BAT54N3.PDF ]
[ BAT54N3 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
