MEA95-06DA 반도체 회로 부품 판매점
Fast Recovery Epitaxial Diode (FRED) Module
|
|
 IXYS Corporation |
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 95-06 DA
MEK 95-06 DA
MEE 95-06 DA
VRRM = 600 V
IFAV = 95 A
trr = 250 ns
VRSM
V
600
www.DataSheet4U.com
VRRM
V
600
Type
MEA95-06 DA
123
MEK 95-06 DA
123
MEE 95-06 DA
123
TO-240 AA
3
2
1
Symbol
IFRMS
IFAVÿÿx
IFRM
IFSM
I2t
TVJ
Tstg
THmax
Ptot
VISOL
Md
dS
dA
a
Weight
Symbol
IR
VF
VT0
rT
RthJH
RthJC
trr
IRM
Test Conditions
Tcase = 75°C
Tcase = 75°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Tcase = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M5)
Terminal connection torque (M5)
Creep distance on surface
Strike distance through air
Maximum allowable acceleration
Maximum Ratings
142
95
TBD
1200
1300
A
A
A
A
A
1080
1170
A
A
7200
7100
A2s
A2s
5800
5700
A2s
A2s
-40...+150
-40...+125
110
°C
°C
°C
280 W
3000
3600
V~
V~
2.5-4/22-35 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
12.7
9.6
50
mm
mm
m/s2
90 g
Test Conditions
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 100 A;
IF = 300 A;
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
For power-loss calculations only
TVJ = 125°C
DC current
DC current
IF = 100 A
VR = 300 V
-di/dt = 200 A/ms
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
Characteristic Values (per diode)
typ. max.
2 mA
0.5 mA
34 mA
1.36 V
1.55 V
2.05 V
2.09 V
1.01 V
2.85 mW
0.550 K/W
0.450 K/W
250 300 ns
14 A
21 A
Features
q International standard package
with DCB ceramic base plate
q Planar passivated chips
q Short recovery time
q Low switching losses
q Soft recovery behaviour
q Isolation voltage 3600 V~
q UL registered E 72873
Applications
q Antiparallel diode for high frequency
switching devices
q Free wheeling diode in converters
and motor control circuits
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
Dimensions in mm (1 mm = 0.0394")
x IFAV rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
MEA 95-06 DA MEE 95-06 DA
MEK 95-06 DA
200
A
175
150
IF
125
100
75
TVJ=150°C
TVJ=100°C
TVJ=25°C
50
www.DataSheet4U.2c5om
0
0.0 0.5 1.0 1.5 V
VF
Fig. 1 Forward current I versus
F
voltage drop VF per leg
2.0
2.0
1.5
Kf
1.0
Qr
IRM
0.5
4
TVJ= 100°C
µC VR = 300V
Qr 3
IF=190A
2 IF= 95A
IF=47.5A
1
0
10 100 A/ms 1000
-diF/dt
Fig. 2 Reverse recovery charge Q
r
versus -diF/dt
250
ns
trr 200
150
TVJ= 100°C
VR = 300V
IF=190A
IF= 95A
IF=47.5A
100
60
A
50
IRM
40
30
TVJ= 100°C
VR = 300V
IF=190A
IF= 95A
IF=47.5A
20
10
0
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 3 Peak reverse current I
RM
versus -diF/dt
50
A
VFR40
30
TVJ= 100°C
IF = 150A
tfr
1.0
µs
VFR 0.8
tfr
0.6
20 0.4
10 0.2
0.0
0
50 100 °C 150
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
0.6
K/W
0.5
50
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0.4
ZthJH
0.3
0.2
0.1
0.0
0.001
0.01
0.1
Fig. 7 Transient thermal impedance junction to heatsink
1s
t
10
0 0.0
0 200 400 600 800 1A0/0m0s
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1 0.037
2 0.138
3 0.093
4 0.282
0.002
0.134
0.25
0.274
© 2000 IXYS All rights reserved
2-2
|
PDF 파일 내의 페이지 : 총 2 페이지
제조업체: IXYS Corporation
( ixys )
MEA95-06DA diode
데이터시트 다운로드 :
[ MEA95-06DA.PDF ]
[ MEA95-06DA 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
MEA95-06DA
Fast Recovery Epitaxial Diode (FRED) Module - IXYS Corporation
MEA95-06DA
Fast Recovery Epitaxial Diode (FRED) Module - IXYS Corporation