LMBD3004SLT1G 반도체 회로 부품 판매점
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
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 LRC |
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LESHAN RADIO COMPANY, LTD.
HIGH VOLTAGE SURFACE MOUNT
SWITCHING DIODE
FETURE
·z Fast Switching Speed
·z High Conductance
·z High Reverse Breakdown Voltage Rating
z We declare that the material of product
compliance with RoHS requirements.
Ordering Information(Pb-free)
Device
Marking
LMBD3004SLT1G KAE
LMBD3004SLT3G KAE
Shipping
3000/Tape&Reel
10000/Tape&Reel
Maximum Ratings @ TA=25℃ unless otherwise specified
Characteristic
Symbol
Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current(Note 2)
IF
Peak Repetitive Forward Current(Note 2)
Non-Repetitive Peak Forward Surge Current @t=1.0µs
@t=1.0s
IFRM
IFSM
Power Dissipation(Note 2)
Pd
Thermal Resistance Junction to Ambient Air(Note 2)
R0JA
Operating and Storage Temperature Range
Tj, TSTG
LMBD3004SLT1G
3
1
2
SOT –23
CAHODE/ANODE
3
1
ANODE
2
CATHODE
LMC10114L
350
300
212
225
625
4.0
1.0
350
357
-65 to +150
Unit
V
V
V
mA
mA
A
mW
℃/W
℃
Electrical Characteristics @ TA=25℃ unless otherwise specified, per element
Characteristic
Symbol Min Typ MAX Unit
Test Condition
Reverse Breakdown Voltage(Note 1)
V(BR)R 350
V IR=100µA
0.78 0.87
IF=20mA
Forward Voltage(Note 1)
VF 0.93 1.0 V IF=100mA
1.03 1.25
IF=200mA
Reverse Current(Note 1)
30 100 nA VR=240V
IR 35 100 µA VR=240V, Tj=150℃
Total Capacitance
CT 1.0 5.0 Pf VR=0V, f=1.0MHZ
Reverse Recovery Time
Trr
IF=IR=30mA
50 ns
Irr=3.0mA, RL=100Ω
Notes: 1. Short duration test pulse used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
1/3
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500
400
300
200
100
0
0 100 200
TA, AMBIENT TEMPERATURE, (°C)
Fig. 1 Power Derating Curve, total package
1000
100
Tj = 150°C
10
Tj = 75°C
1.0
0.1
0.01
Tj = 25°C
0.001
0
50 100 150 200 250 300 350
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics, per element
LESHAN RADIO COMPANY, LTD.
LMBD3004SLT1G
1000
100
10
1.0
Tj = 150°C
Tj = 25°C
0.1
0.01
0
400 800 1200 1600 2000
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics, per element
1.1
1.0
0.9
0.8
0.7
0.01
0.1 1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
vs. Reverse Voltage, per element
100
2/3
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LMBD3004SLT1G diode
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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