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(HER101G - HER108G) 1.0A GLASS PASSIVATED ULTRAFAST DIODE
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 Won-Top Electronics |
www.DataSheet4U.com
WTE
POWER SEMICONDUCTORS
HER101G – HER108G Pb
1.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
AB
A
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim Min Max
A 25.4 —
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 1.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
HER
101G
50
HER
102G
100
HER
103G
200
HER
104G
300
HER
105G
400
HER
106G
600
HER
107G
800
HER
108G
1000
VR(RMS)
35
70 140 210 280 420 560 700
IO 1.0
IFSM
VFM
IRM
trr
Cj
Tj
TSTG
30
1.0
50
20
1.3
5.0
100
-65 to +150
-65 to +150
1.7
75
15
Unit
V
V
A
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER101G – HER108G
1 of 4
© 2006 Won-Top Electronics
1.00
0.75
0.50
0.25
Single phase half wave
Resistive or Inductive load
0
0
30
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
175
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
Tj = 25°C
10 Pulse width = 300µs
HER101G - HER104G
HER105G
1.0
0.1
0.01
0
HER106G - HER108G
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
Tj = 25°C
f = 1.0MHz
HER101G - HER105G
10
HER106G - HER108G
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
50Ω NI (Non-inductive)
10Ω NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0Ω
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
HER101G – HER108G
2 of 4
© 2006 Won-Top Electronics
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