RURH1515CC 반도체 회로 부품 판매점
(RURH1510CC - RURH1520CC) Ultrafast Dual Diodes
|
|
 Harris Corporation |
www.DataSheet4U.com
SEMICONDUCTOR
MUR3010PT, RURH1510CC,
MUR3015PT, RURH1515CC,
MUR3020PT, RURH1520CC
April 1995
15A, 100V - 200V Ultrafast Dual Diodes
Features
• Ultrafast with Soft Recovery Characteristic
(tRR < 30ns)
• +175oC Rated Junction Temperature
• Reverse Voltage Up to 200V
• Avalanche Energy Rated
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Package
JEDEC TO-218AC
CATHODE
(FLANGE)
ANODE1
CATHODE
ANODE2
Description
MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC,
RURH1515CC, RURH1520CC are ultrafast dual diodes
(tRR < 30ns) with soft recovery characteristics. They have a low
forward voltage drop and are of planar, silicon nitride passivated,
ion-implanted, epitaxial construction.
Symbol
These devices are intended for use as energy steering/ clamping
diodes and rectifiers in a variety of switching power supplies and
other power switching applications. Their low stored charge and
ultrafast recovery with soft recovery characteristics minimizes
ringing and electrical noise in many power switching circuits thus
reducing power loss in the switching transistor.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
MUR3010PT
TO-218AC
MUR3010PT
RURH1510CC
TO-218AC
RURH1510C
MUR3015PT
TO-218AC
MUR3015PT
RURH1515CC
TO-218AC
RURH1515C
MUR3020PT
TO-218AC
MUR3020PT
RURH1520CC
TO-218AC
RURH1520C
NOTE: When ordering, use the entire part number.
K
A1 A2
Absolute Maximum Ratings TC = +25oC
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(Total device forward current at rated VR and TC = 150oC)
Peak Forward Repetitive Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
(Rated VR, square wave 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Surge applied at rated load condition halfwave 1phase 60Hz)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
MUR3010PT
RURH1510CC
100V
100V
100V
15A
30A
200A
-55oC to +175oC
MUR3015PT
RURH1515CC
150V
150V
150V
15A
30A
200A
-55oC to +175oC
MUR3020PT
RUR1520CC
200V
200V
200V
15A
30A
200A
-55oC to +175oC
Copyright © Harris Corporation 1995
6-12
File Number 2775.4
MUR3010PT, MUR3015PT, MUR3020PT, RURH1510CC, RURH1515CC, RURH1520CC
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
SYMBOL
TEST
MUR3010PT, RURH1510CC MUR3015PT, RURH1515CC MUR3020PT, RURH1520CC
CONDITION MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
VF
IF = 15A
- - 0.85 - - 0.85 - - 0.85 V
TC = +150oC
IF = 15A
TC = +25oC
-
- 1.05 -
- 1.05 -
- 1.05 V
IR at
TC = +150oC
VR = 100V
VR = 150V
- - 500 - - - - - - µA
- - - - - 500 - - - µA
VR = 200V
- - - - - - - - 500 µA
IR at
TC = +25oC
VR = 100V
VR = 150V
- - 100 - - - - - - µA
- - - - - 100 - - - µA
VR = 200V
- - - - - - - - 100 µA
tRR IF = 1A - - 30 - - 30 - - 30 ns
IF = 15A
- - 35 - - 35 - - 35 ns
tA
IF = 1A
- 18 -
- 18 -
- 18 - ns
IF = 15A
- 20 -
- 20 -
- 20 - ns
tB
IF = 1A
- 9 - - 9 - - 9 - ns
RθJC
IF = 15A
- 10 -
- 10 -
- 10 - ns
- - 1.5 - - 1.5 - - 1.5 oC/W
EAVL
see Fig. 7, 8
-
- 20 -
- 20 -
- 20 mj
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time at dIF/dt = 100A/µs (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF R4
R1
+LLOOP
Q1
+V1
0
t2
t1
R2
0
-V2
t3
Q3
R3
+V3
Q2
t1 ≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1 ≤ tA(MIN)
R4 10
LLOOP
DUT
Q4
C1
-V4
R4
FIGURE 1. tRR TEST CIRCUIT
dIF
IF dt
0
tRR
tA tB
0.25 IRM
IRM
VRM (REC)
VR
FIGURE 2. DEFINITIONS OF tRR, tA AND tB
6-13
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Harris Corporation
( harris )
RURH1515CC diode
데이터시트 다운로드 :
[ RURH1515CC.PDF ]
[ RURH1515CC 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
