VESD05C-FC1 반도체 회로 부품 판매점
Flip Chip Protection Diode - Chip Size 0402
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 Vishay Siliconix |
www.DataSheet4U.com
VISHAY
VESD05C-FC1
Vishay Semiconductors
Flip Chip Protection Diode - Chip Size 0402
Description
Flip Chip is a chip with all packaging and interconnec-
tions manufactured on the wafer prior to dicing. The
interconnections are made of solder bumps on i/o
pads.Our device utilizes a silicon P/N junction for
excellent clamping (protection) performance with low
leakage current characteristic.
Features
• ESD protection to IEC 61000-4-2 30 kV (air)
• ESD protection to IEC 61000-4-2 8 kV (contact)
12
19120
• ESD protection to IEC 61000-4-5
(lightning): 8/20 µs, IPPM = 10 mA
• 120 W peak pulse power dissipation per line
(8/20 µs)
• Suitable for high frequency applications
(low capacitance, low parasitic inductance)
• Low clamping voltage
• Minimum PCB space needed (0.5 mm2),
< 0.55 mm height, only 0.47 mg/pcs
• No need for underfill material and/or additional
solder
• Can be assembled using standard SMT pick &
place equipment, reflow processes per J-STD-020
and assembly methods
• Green product
Applications
Cellular phones
Personal digital assistants (PDA), notebook
computers
MP3 players
GPS
Digital cameras
Bluetooth
Audio amplifiers
DVD
Power management systems
Read write heads for hard drives
Modules for watches
CPU
Digital TV’s and sattelites receivers
SMART cards
Mechanical Data
Case: Flip Chip 1005
Standard EIA chip size: 0402
8 mm tape and reel per EIA-481-1-A/IEC60286
Top contacts: 4 solder bumps 100 µm in height
(nominal)
Bumps of SnAgCu (lead-free)1)
1) also available with PbSn bumps
Document Number 85859
Rev. 1.1, 14-Jul-04
DataSheet4 U .com
www.vishay.com
1
www.DataSheet4U.com
VESD05C-FC1
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Peak pulse power dissipation1) 8/20 µs pulse
Peak pulse current
8/20 µs pulse
ESD Air discharge per
IEC 61000-4-2
ESD Contact discharge per
IEC 61000-4-2
Soldering temperature
Soldering time
1) Non-repetitive current pulse
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Operating temperature
Storage temperature
Symbol
PPPM
IPPM
VESD
VESD
Tsd
t
Symbol
TJ
TSTG
Value
120
10
>30
>8
260
10
Value
- 55 to + 150
- 55 to + 150
Unit
W
A
kV
kV
°C
s
Unit
°C
°C
Electrical Characteristics
Reverse
Stand-off
Voltage
Min.
Breakdown
Voltage
VBR
VRWM
V
5
@ 1 mA
V
6
Max.
Clamping
Voltage
@ IPPM = 1 A
@ 8/20 µs
@ IPPM = 10 A
@ 8/20 µs
VC
VV
9 12
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Max.
Leakage
Current
@ VRWM
µA
20
Capacitance
@ VR = 0 V,
f = 1 MHZ
CD
pF
75
120
8 µs to 100 %
100
80
60
40 20 µs to 50 %
20
0
0
19121
5 10 15 20 25 30 35 40
Time (µs )
Figure 1. Pulse Waveform 8/20 µs acc. IEC 61000 - 4 - 5
80
70
60
50
40
30
20
10
0
0
19122
f = 1 MHz
12345
VR - Reverse V oltage (V)
6
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
Document Number 85859
Rev. 1.1, 14-Jul-04
DataSheet4 U .com
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제조업체: Vishay Siliconix
( vishay )
VESD05C-FC1 diode
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[ VESD05C-FC1.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
VESD05C-FC1
Flip Chip Protection Diode - Chip Size 0402 - Vishay Siliconix
VESD05C-FC1
Flip Chip Protection Diode - Vishay