DFB54 반도체 회로 부품 판매점
Fast Recovery Diode
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 Dynex |
Replaces March 1998 version, DS4219-2.4
DFB54
DFB54
Fast Recovery Diode
DS4219-3.0 January 2000
APPLICATIONS
s Power Supplies
s Freewheel Diode
s Battery Chargers
s D.C. Motor Control
s Welding
s Rectification
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
DFB54 35
DFB54 34
DFB54 33
DFB54 32
DFB54 31
DFB54 30
3500
3400
3300
3200
3100
3000
Lower voltage grades available.
Conditions
V = V + 100V
RSM
RRM
CURRENT RATINGS
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
trr
3500V
2135A
20000A
1500µC
6.5µs
Outline type code: DO200AD.
See Package Details for further information.
Symbol
Parameter
Double Side Cooled
IF(AV)
I
F(RMS)
Mean forward current
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Conditions
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
T = 65oC
case
Half wave resistive load, T = 65oC
case
Tcase = 65oC
T = 65oC
case
Max. Units
2135
3350
3060
A
A
A
1320
2080
1810
A
A
A
1/7
DFB54
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) forward current
FSM
I2t I2t for fusing
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
20.0 kA
2000 x 103 A2s
16 kA
1280 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c) Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj Virtual junction temperature
Tstg Storage temperature range
- Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 44kN
with mounting compound
Double side
Single side
Forward (conducting)
Min. Max. Units
- 0.013 oC/W
- 0.025 oC/W
- 0.027 oC/W
- 0.003 oC/W
- 0.006 oC/W
- 150
-55 150
oC
oC
39.6 48.4 kN
CHARACTERISTICS
Symbol
Parameter
VFM Forward voltage
I Peak reverse current
RRM
t
rr
Reverse recovery time
QRA1 Recovered charge (50% chord)
I Reverse recovery current
RM
K Soft factor
V
TO
rT
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 1500A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
IF = 1000A, diRR/dt = 100A/µs
Tcase = 150oC, VR = 100V
At Tvj = 150oC
At Tvj = 150oC
di/dt = 1000A/µs, Tj = 125oC
Typ. Max. Units
- 1.7 V
- 100 mA
- 6.5 µs
- 1500 µC
- 450 A
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- 1.15 V
- 0.32 mΩ
- -V
2/7
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DFB54 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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