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Infineon Technologies AG |
Silicon Variable Capcitance Diode
For UHF-TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB545 /BB565...
BB545
BB565/-02V
12
Type
BB545
BB565
BB 565-02V
Package
SOD323
SCD80
SC79
Configuration
single
single
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
R 5k
VR
VRM
Forward current
Operating temperature range
Storage temperature
IF
Top
Tstg
LS (nH) Marking
1.8 white U
0.6 CC
0.6 C
Value
30
35
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 Nov-07-2002
BB545 /BB565...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR nA
- - 10
- - 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB545
VR = 1V to 28V, f = 1 MHz, 4 diodes sequence,
BB565/ -02V
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB565/ -02V
CT
CT1/CT28
CT2/CT25
CT/CT
18.5
13.2
1.85
1.8
9
6.3
-
-
-
20
14.8
2.07
2
10
7.2
-
0.5
0.7
21.5
16.4
2.28
2.2
pF
11 -
8.1
%
2.5
1.5
2
Series resistance
VR = 3 V, f = 470 MHz
1For details please refer to Application Note 047
rS
- 0.6 -
2 Nov-07-2002
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