OPT301M 반도체 회로 부품 판매점
INTEGRATED PHOTODIODE AND AMPLIFIER
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 Burr-Brown Corporation |
®
FPO
70%
OPT301
INTEGRATED PHOTODIODE
AND AMPLIFIER
FEATURES
q PHOTODIODE SIZE: 0.090 x 0.090 inch
(2.29 x 2.29mm)
q 1MΩ FEEDBACK RESISTOR
q HIGH RESPONSIVITY: 0.47A/W (650nm)
q IMPROVED UV RESPONSE
q LOW DARK ERRORS: 2mV
q BANDWIDTH: 4kHz
q WIDE SUPPLY RANGE: ±2.25 to ±18V
q LOW QUIESCENT CURRENT: 400µA
q HERMETIC TO-99
APPLICATIONS
q MEDICAL INSTRUMENTATION
q LABORATORY INSTRUMENTATION
q POSITION AND PROXIMITY SENSORS
q PHOTOGRAPHIC ANALYZERS
q SMOKE DETECTORS
2
1MΩ
40pF
4
75Ω 5
λ VO
81
OPT301
3
V+ V–
DESCRIPTION
The OPT301 is an opto-electronic integrated circuit
containing a photodiode and transimpedance
amplifier on a single dielectrically isolated chip. The
transimpedance amplifier consists of a precision FET-
input op amp and an on-chip metal film resistor. The
0.09 x 0.09 inch photodiode is operated at zero bias for
excellent linearity and low dark current.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered in discrete de-
signs such as leakage current errors, noise pick-up and
gain peaking due to stray capacitance.
The OPT301 operates over a wide supply range (±2.25
to ±18V) and supply current is only 400µA. It is
packaged in a hermetic TO-99 metal package with a
glass window, and is specified for the –40°C to 85°C
temperature range.
SPECTRAL RESPONSIVITY
Ultraviolet
0.5
Using Internal
0.4 1MΩ Resistor
0.3
Infrared
0.5
0.4
0.3
0.2 0.2
0.1 0.1
00
100 200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©1994 Burr-Brown Corporation
PDS-1228B
Printed in U.S.A. January, 1994
SPECIFICATIONS
ELECTRICAL
At
T
A
=
+25°C,
V
S
=
±15V,
λ
=
650nm,
internal
1MΩ
feedback
resistor,
unless
otherwise
noted.
PARAMETER
RESPONSIVITY
Photodiode Current
Voltage Output
vs Temperature
Unit-to-Unit Variation
Nonlinearity(1)
Photodiode Area
CONDITIONS
650nm
650nm
650nm
FS Output = 10V
(0.090 x 0.090in)
(2.29 x 2.29mm)
MIN
OPT301M
TYP
0.47
0.47
200
±5
0.01
0.008
5.2
DARK ERRORS, RTO(2)
Offset Voltage, Output
vs Temperature
vs Power Supply
Voltage Noise
VS = ±2.25V to ±18V
Measured BW = 0.1 to 100kHz
±0.5
±10
10
160
RESISTOR—1MΩ Internal
Resistance
Tolerance
vs Temperature
1
±0.5
50
FREQUENCY RESPONSE
Bandwidth, Large or Small-Signal, –3dB
Rise Time, 10% to 90%
Settling Time, 1%
0.1%
0.01%
Overload Recovery Time
OUTPUT
Voltage Output
Capacitive Load, Stable Operation
Short-Circuit Current
FS to Dark
FS to Dark
FS to Dark
100% overdrive, VS = ±15V
100% overdrive, VS = ±5V
100% overdrive, VS = ±2.25V
RL = 10kΩ
RL = 5kΩ
(V+) – 1.25
(V+) – 2
4
90
240
350
900
240
500
1000
(V+) – 0.65
(V+) – 1
10
±18
POWER SUPPLY
Specified Operating Voltage
Operating Voltage Range
Quiescent Current
IO = 0
±2.25
±15
±0.4
TEMPERATURE RANGE
Specification
Operating/Storage
Thermal Resistance, θJA
–40
–55
200
NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.
MAX
±2
100
±2
±18
±0.5
+85
+125
PHOTODIODE SPECIFICATIONS
At TA = +25°C, unless otherwise noted.
PARAMETER
Photodiode Area
Current Responsivity
Dark Current
vs Temperature
Capacitance
NOTE: (1) Voltage Across Photodiode.
CONDITIONS
(0.090 x 0.090in)
(2.29 x 2.29mm)
650nm
VD = 0V(1)
VD = 0V(1)
Photodiode of OPT301
MIN
TYP
MAX
0.008
5.1
0.47
500
doubles every 10°C
4000
UNITS
A/W
V/µW
ppm/°C
%
% of FS
in2
mm2
mV
µV/°C
µV/V
µVrms
MΩ
%
ppm/°C
kHz
µs
µs
µs
µs
µs
µs
µs
V
V
nF
mA
V
V
mA
°C
°C
°C/W
UNITS
in2
mm2
A/W
fA
pF
®
OPT301
2
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OPT301M diode
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