NDL7553P 반도체 회로 부품 판매점
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
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 NEC |
DATA SHEET
LASER DIODE
NDL7553P Series
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE
1550nm OTDR APPLICATION
DESCRIPTION
NDL7553P Series is a 1550nm newly developed Strained Multiple Quantum Well (st-MQW) structure pulsed laser
diode coaxial module with singlemode fiber. It is designed for light source of optical measurement equipment
(OTDR).
FEATURES
x High output power
Pf = 145 mW @IFP = 1000 mA*1
x Long wavelength
OC = 1550 nm
x Coaxial module without thermoelectric cooler.
x Singlemode fiber pigtail
*1 Pulse Conditions: Pulse width (PW) = 10 Ps, Duty = 1 %
NDL7553P
Optical Fiber
SM-9/125
Length = 1 m
φ 0.9
φ7
PACKAGE DIMENSIONS
in millimeters
NDL7553P1
Optical Fiber
SM-9/125
Length = 1 m
φ 0.9
φ7
φ 0.45
φ6
PIN CONNECTIONS
P.C.D. = φ 2 4
3
1
2
12
LD
CASE
φ6
12.7
17.0
PIN CONNECTIONS
P.C.D. = φ 2 4
3
1
2
φ 0.45
12
LD
CASE
The information in this document is subject to change without notice.
Document No. P10473EJ4V0DS00 (4th edition)
Date Published October 1996 N
Printed in Japan
©
1995
NDL7553P Series
ORDERING INFORMATION
Part Number
NDL7553P
NDL7553PC
NDL7553PD
NDL7553P1
NDL7553P1C
NDL7553P1D
Available Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
FIange Type
no flange
flat mount flange
ABSOLUTE MAXIMUM RATINGS (TC = 25 qC)
Parameter
Pulsed Forward Current*1
Reverse Voltage
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature (10 sec)
Symbol
IFP
VR
TC
Tstg
Tsld
Ratings
1.2
2.0
ð20 to +60
ð40 to +85
260
Unit
A
V
qC
qC
qC
*1 Pulse Condition: Pulse Width (PW) = 10 Ps, Duty = 1 %
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 qC)
Parameter
Forward Voltage
Threshold Current
Optical Output Power from Fiber
RMS Center Wavelength
RMS Spectral Width
Rise Time
Fall Time
Symbol
VFP
Ith
Pf
OC
V
tr
tf
Conditions
IFP = 1000 mA,
PW = 10 Ps, Duty = 1 %
IFP = 1000 mA,
PW = 10 Ps, Duty = 1 %
IFP = 1000 mA,
PW = 10 Ps, Duty = 1 %
IFP = 1000 mA,
PW = 10 Ps, Duty = 1 %
10 - 90 %
90 - 10 %
MIN.
TYP.
2.5
MAX.
4.0
Unit
V
45 75 mA
95 145
mW
1530 1550 1570
nm
7.5 10.0 nm
2.0 ns
2.0 ns
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60qC)
Parameter
Threshold Current
Optical Output Power from Fiber
RMS Center Wavelength
Temperature Dependency of
Center Wavelength
RMS Spectral Width
Symbol
Ith
Pf
OC
'O/'T
Conditions
IFP = 1000 mA,
PW = 10 Ps, Duty = 1 %
IFP = 1000 mA,
PW = 10 Ps, Duty = 1 %
V IFP = 1000 mA,
PW = 10 Ps, Duty = 1 %
MIN.
60
TYP.
MAX.
100
Unit
mA
mW
1520
1585
nm
0.35 nm/qC
10 nm
2
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NDL7553P diode
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