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NDL7515P 반도체 회로 부품 판매점

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION



NEC 로고
NEC
NDL7515P 데이터시트, 핀배열, 회로
DATA SHEET
LASER DIODE
NDL7515P Series
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE
1 310 nm OTDR APPLICATION
DESCRIPTION
The NDL7515P Series is a 1 310 nm newly developed Multiple Quantum Well (MQW) structure pulsed laser diode
module with single mode fiber. It is designed for light source of optical measurement equipment (OTDR).
FEATURES
Output power
Pf = 20 mW MIN.@IFP = 400 mA, TC = 25 °C*1
Long wavelength
λC = 1 310 nm
Coaxial module without thermoelectric cooler
Single mode fiber pigtail
*1 Pulse conditions: Pulse width (PW) = 10 µs, Duty = 1 %
NDL7515P
PACKAGE DIMENSIONS
in millimeters
Optical Fiber
SM-9/125
Length : 1 m
φ 0.9
φ7
Optical Fiber
SM-9/125
Length : 1 m
NDL7515P1
φ 0.9
φ7
φ 0.45
φ6
PIN CONNECTIONS
P.C.D. = φ 2 4
3
1
2
12
LD
CASE
φ6
12.7
17.0
PIN CONNECTIONS
P.C.D. = φ 2 4
3
1
2
φ 0.45
12
LD
CASE
The information in this document is subject to change without notice.
Document No. P11619EJ3V0DS00 (3rd edition)
Date Published December 1996 N
Printed in Japan
The mark shows major revised points.
©
1996


NDL7515P 데이터시트, 핀배열, 회로
NDL7515P Series
ORDERING INFORMATION
Part Number
NDL7515P
NDL7515PC
NDL7515P1
NDL7515P1C
Available Connector
Without Connector
With FC-PC Connector
Without Connector
With FC-PC Connector
FIange Type
No Flange
Flat Mount Flange
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter
Pulsed Forward Current*1
Reverse Voltage of LD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature (10 s)
Symbol
IFP
VR
TC
Tstg
Tsld
Ratings
600
2.0
20 to +60
40 to +85
260
Unit
mA
V
°C
°C
°C
*1 Pulse conditions: Pulse width (PW) = 10 µs, Duty = 1 %
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Forward Voltage
Threshold Current
Optical Output Power from Fiber
Center Wavelength
Spectral Width
Rise Time
Fall Time
Symbol
VFP
Ith
Pf
λC
σ
tr
tf
Conditions
IFP = 400 mA,
PW = 10 µs, Duty = 1 %
IFP = 400 mA,
PW = 10 µs, Duty = 1 %
IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (20 dB)
IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (20 dB)
10 to 90 %
90 to 10 %
MIN.
TYP.
2.5
MAX.
4.0
Unit
V
20 30 mA
20 30
mW
1 290 1 310 1 330
nm
10 nm
1.0 ns
1.0 ns
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60°C)
Parameter
Threshold Current
Optical Output Power from Fiber
Center Wavelength
Temperature Dependence of
Center Wavelength
Spectral Width
Symbol
Ith
Pf
λC
λ/T
Conditions
IFP = 400 mA,
PW = 10 µs, Duty = 1 %
IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (20 dB)
σ IFP = 400 mA, PW = 10 µs,
Duty = 1 %, RMS (20 dB)
MIN.
10
TYP.
MAX.
50
Unit
mA
mW
1 280
1 342.5 nm
0.35 nm/°C
10 nm
2




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NDL7515P diode

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