NTE592 판매점 - Silicon Diode / General Purpose / High Voltage

NTE592

Silicon Diode, General Purpose, High Voltage

Description:

The NTE592 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This

device is intended for switching and general purposes applications.

Absolute Maximum Ratings:

Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V

Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA

Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 200mA

DC Forward Current (TA ≤ +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mA

Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W

Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W

Thermal Resistance, Soldering Points–to–Ambient, RthSA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90K/W

Note 1. Measured under pulse conditions: Pulse Time = tp ≤ 0.3ms.

Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Forward Voltage

Reverse Breakdown Voltage

Reverse Current

Differential Resistance

Diode Capacitance

Reverse Recovery Time

(When switched from

IF = 30mA to IR = 30mA

VF IF = 100mA

– – 1.00 V

IF = 200mA

– – 1.25 V

V(BR)R IR = 100µA, Note 1 & 3 250 –

–V

IR VR = 200V

– – 100 nA

VR = 200V, TJ = +150°C –

– 100 µA

rdiff IF = 10mA

– 5 –Ω

Cd VR = 0, f = 1MHz

– – 5 pF

trr measured at IR = 3mA,

RL = 100Ω

–

– 50 ns

Note 1. Measured under pulse conditions: Pulse Time = tp ≤ 0.3ms.

Note 3. At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage

limited to 275V.

NTE592 반도체 회로 부품 판매점

Silicon Diode / General Purpose / High Voltage

국내 전력반도체 판매점

일반적인 전자부품 판매점

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