SRD00111Z 반도체 회로 부품 판매점
Silicon PIN Photodiode in TO-Package
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 Siemens Semiconductor Group |
Silicon PIN Photodiode in TO-Package
• Si-PIN-photodiode
• Designed for application in fiber-optic
• Transmission systems
• Sensitive receiver for the 1st window (850 nm)
• Suitable for bit rates up to 565 Mbit/s
• Low junction and low package capacitance
• Fast switching times
• Low dark current
• Low noise
• Hermetically sealed 3-pin metal case
• Cathode electrically isolated from case
Type
SRD 00111Z
Ordering Code
Q62702-P3019
SRD 00111Z
Connector/Flange
TO, without optics
Maximum Ratings
Parameter
Reverse voltage
Isolation voltage to case
Junction temperature
Storage temperature
Soldering time (wave / dip soldering),
distance between solder point and base plate
≥ 2 mm, 260 °C
Symbol
VR
VR
Tj
Tstg
ts
Values
50
100
125
− 55 … 125
Unit
V
V
°C
°C
10 s
Semiconductor Group
1
02.95
SRD 00111Z
Characteristics
All data refer to an ambient temperature of 25 °C.
Parameter
Symbol
Photosensitive area
A
Wavelength of max. sensitivity
Quantumn efficiency at λ = 850 nm
λSmax
η
Spectral sensitivity
λ = 850 nm
λ = 950 nm
Rise and fall time
RL = 50 Ω, VR = 50 V, λ = 850 nm
Junction capacitance at f = 1 MHz
VR = 0 V
VR = 1 V
VR = 12 V
VR = 20 V
3 dB bandwidth
RL = 50 Ω, VR = 50 V, λ = 850 nm
Dark current
VR = 20 V, E = 0
Noise equivalent power
VR = 20 V, λ = 850 nm
Detectivity
VR = 20 V, λ = 850 nm
Temperature coefficient Ip
Isolation current, VIS = 100 V
Sλ850
Sλ950
tr; tf
C0
C1
C12
C20
fc
ID
NEP
D*
TC
IIS
Values
1
850
0.8
Unit
mm2
nm
0.55 (≥ 0.45) A/W
0.45
A/W
1 ns
13 pF
7 pF
3.3 pF
3 pF
500
1 (≤ 5)
MHz
nA
3.3 × 10−14 W/√Hz
3.1 × 1012 cm√Hz/W
0.2
0.1 (≤ 1)
%/K
nA
Semiconductor Group
2
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제조업체: Siemens Semiconductor Group
( siemens )
SRD00111Z diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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