PDZ9.1B 반도체 회로 부품 판매점
Voltage regulator diodes
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D049
PDZ-B series
Voltage regulator diodes
Product specification
Supersedes data of 1998 Jan 09
1998 Apr 23
Philips Semiconductors
Voltage regulator diodes
Product specification
PDZ-B series
FEATURES
• Total power dissipation:
max. 400 mW
• Small plastic package suitable for
surface mounted design
• Wide variety of voltage ranges:
nom. 2.4 to 36 V (E24 range).
APPLICATIONS
• General voltage regulation.
DESCRIPTION
PINNING
Low-power general purpose voltage PIN DESCRIPTION
regulator diodes in a small plastic
,SMD SOD323 package.
1 cathode
2 anode
handbook, halfpage
1
2
Top view
MAM387
Fig.1 Simplified outline (SOD323) and symbol.
MARKING
TYPE
NUMBER
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
MARKING
CODE
Z0
Z1
Z2
Z3
Z4
Z5
Z6
Z7
TYPE
NUMBER
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
MARKING
CODE
Z8
Z9
ZA
ZB
ZC
ZD
ZE
ZF
TYPE
NUMBER
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
MARKING
CODE
ZG
ZH
ZJ
ZK
ZL
ZM
ZN
ZP
TYPE
NUMBER
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
MARKING
CODE
ZQ
ZR
ZS
ZT
ZU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
IF continuous forward current
IZSM non-repetitive peak reverse current tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
Ptot total power dissipation
Tamb = 25 °C; note 1; see Fig.2
Tstg storage temperature
Tj junction temperature
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
MIN.
MAX.
− 200
see Table 2
UNIT
mA
− 400
−65 +150
− 150
mW
°C
°C
1998 Apr 23
2
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PDZ9.1B diode
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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