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Siemens Semiconductor Group |
BAT 64...W
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
3
BAT 64W
BAT 64-04W
BAT 64-05W BAT 64-06W
2
1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BAT 64W
63s
Q62702-A1159
1 = A 2 n.c. 3 = C SOT-323
BAT 64-04W 64s
Q62702-A1160
1 = A1 2 = C2 3 = C1/A2
BAT 64-05W 65s
Q62702-A1161
1 = A1 2 = A2 3 = C1/2
BAT 64-06W 66s
Q62702-A1162
1 = C1 2 = C2 3 = A1/2
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
Forward current
Average forward current (50/60Hz, sinus)
Surge forward current (t< 100µs)
Total power dissipation BAT 64W , TS≤120°C
Total power dissipat. BAT64-04/06W , TS≤111°C
Total power dissipation BAR 64-05W , TS≤104°C
Junction temperature
Storage temperature
VR
IF
IFAV
IFSM
Ptot
Ptot
Ptot
Tj
Tstg
Value
40
250
120
800
250
250
250
150
-55...+150
Unit
V
mA
mW
°C
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109798-1-1919-081
BAT 64...W
Thermal Resistance
Junction - ambient 1) BAT 64W
Junction - ambient 1) BAT 64-04/06W
Junction - ambient 1) BAT 64-05W
Junction - soldering point BAT 64W
Junction - soldering point BAT 64-04/06W
Junction - soldering point BAT 64-05W
RthJA
RthJA
RthJA
RthJS
RthJS
RthJS
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
≤255
≤290
≤455
≤120
≤155
≤185
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR - - 2 µA
IR - - 200
VF mV
- 320 350
- 385 430
- 440 520
- 570 750
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
CT - 4 6 pF
SSeemmicioconndduuctcotor rGGrorouupp
22
Sep-109798-1-1919-081
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