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Siemens Semiconductor Group |
Silicon Schottky Diode
Preliminary data
• For mixer applications in the VHF/UHF range
• For high speed switching
BAT 68-03W
Type
Marking Ordering Code
BAT 68-03W K
Q62702-A1046
Pin Configuration
1=A 2=K
Package
SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total Power dissipation
TS = 95 °C
Junction temperature
Operating temperature range
Storage temperature
Symbol
VR
IF
Ptot
Tj
Top
Tstg
Values
8
130
150
150
- 65 ... + 150
- 65 ... + 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
445 K/W
365
Semiconductor Group
1
Mar-04-1996
BAT 68-03W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 1 V, TA = 25 °C
VR = 1 V, TA = 60 °C
Forward voltage
IF = 1 mA
IF = 10 mA
Diode capacitance
VR = 0 , f = 1 MHz
Differential forward resistance
IF = 5 mA
V(BR)
IR
VF
CT
RF
8
-
-
-
340
-
-
-
-
-
318
390
-
-
max.
-
0.1
1.2
340
500
1
10
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
Unit
V
µA
mV
pF
Ω
200
mA
IF 160
140
120
100 TA TS
80
60
40
20
0
0 20 40 60 80 100 120 °C 150
TA,TS
Semiconductor Group
2
Mar-04-1996
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