Q62702-A1006 반도체 회로 부품 판매점
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
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 Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode
BAT 114-099R
Features
• High barrier diode for double balanced mixers,
phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
BAT 114-099R
Marking Ordering Code
(taped)
14s Q62702-A1006
Pin Configuration
Package1)
SOT-143
1) Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter
Forward current
Operation temperature
Storage temperature
Power dissipation, TS ≤ 70 °C
Symbol
IF
Top
Tstg
Ptot
Limit Values
90
− 55 to + 150
− 55 to + 150
100
Unit
mA
°C
°C
mW
Semiconductor Group
1
02.96
BAT 114-099R
Thermal Resistance
(per diode)
Parameter
Junction to soldering point
Junction to ambient1)
1) Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
Symbol
RthJS
RthJA
Limit Values
≤ 780
≤ 1020
Unit
K/W
K/W
Electrical Characteristics
(per diode; TA = 25 °C)
Parameter
Forward voltage
IF = 1 mA
IF = 10 mA
Forward voltage matching1)
IF = 10 mA
Diode capacitance
VR = 0 V, f = 1 MHz
Forward resistance
IF = 10 mA / 50 mA
Symbol
VF
∆VF
CT
RF
Limit Values Unit
min. typ. max.
V
− 0.58 0.7
− 0.68 0.78
mV
− − 20
pF
− 0.25 −
Ω
− 5.5 −
1) ∆VF is difference between lowest and highest VF in component.
Semiconductor Group
2
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Siemens Semiconductor Group
( siemens )
Q62702-A1006 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
Q62702-A1004
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) - Siemens Semiconductor Group
Q62702-A1006
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) - Siemens Semiconductor Group