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QEC112
PACKAGE DIMENSIONS
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.800 (20.3)
MIN
0.193 (4.90)
0.030 (0.76)
NOM
0.050 (1.27)
CATHODE
0.100 (2.54)
NOM
0.018 (0.46)
SQ. (2X)
0.155 (3.94)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEC113
SCHEMATIC
ANODE
CATHODE
DESCRIPTION
The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package.
FEATURES
• D= 940 nm
• Chip material = GaAs
• Package type: T-1 (3mm)
• Matched Photosensor: QSC112
• Narrow Emission Angle, 24°
• High Output Power
• Package material and color: Clear, peach tinted plastic
2001 Fairchild Semiconductor Corporation
DS300334 5/21/01
1 OF 3
www.fairchildsemi.com
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEC112
QEC113
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
PD
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
Unit
°C
°C
°C
°C
mA
V
mW
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QEC112
Radiant Intensity QEC113
Rise Time
Fall Time
TEST CONDITIONS
IF = 100 mA
IF = 100 mA
IF = 100 mA, tp = 20 ms
VR = 5 V
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA
SYMBOL
DPE
201/2
VF
IR
IE
IE
tr
tf
MIN
—
—
—
6
14
—
—
TYP
940
24
—
—
—
—
1000
1000
MAX
—
1.5
10
30
—
—
—
UNITS
nm
Deg.
V
µA
mW/sr
mW/sr
ns
ns
www.fairchildsemi.com
2 OF 4
5/21/01 DS300334
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