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Fairchild Semiconductor |
Data Sheet
January 2002
RURP3020
30A, 200V Ultrafast Diode
The RURP3020 is an ultrafast diode (trr < 45ns) with soft
recovery characteristics. It has a low forward voltage drop
and is of planar, silicon nitride passivated, ion-implanted,
epitaxial construction.
This device is intended for use as an energy steering/
clamping diode and rectifier in a variety of switching power
supplies and other power switching applications. Its low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formally development type TA09645.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RURP3020
TO-220AC
RURP3020
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <45ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
• Avalanche Energy Rated
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
CATHODE
A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified
(TC = 145oC)
Forward
Current
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. IF(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave 1 Phase 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
RURP3020
200
200
200
30
70
325
125
20
-55 to 175
UNITS
V
V
V
A
A
A
W
mJ
oC
©2002 Fairchild Semiconductor Corporation
RURP3020 Rev. B
RURP3020
Electrical Specifications TC = 25oC, Unless Otherwise Specified.
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IR
trr
ta
tb
RθJC
DEFINITIONS
IF = 30A
IF = 30A, TC = 150oC
VR = 200V
VR = 200V, TC = 150oC
IF = 1A, dIF/dt = 100A/µs
IF = 30A, dIF/dt = 100A/µs
IF = 30A, dIF/dt = 100A/µs
IF = 30A, dIF/dt = 100A/µs
- - 1.0 V
- - 0.85 V
- - 250 µA
- - 1.0 mA
- - 45 ns
- - 50 ns
- 20 - ns
- 15 - ns
- - 1.2 oC/W
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
200
175oC
100
100oC
10
25oC
1
0 0.3 0.6 0.9 1.2 1.5
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
400
100 175oC
10
100oC
1
0.1
0.01
25oC
0.001
0
50 100 150
VR, REVERSE VOLTAGE (V)
200
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURP3020 Rev. B
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