SM05TG 반도체 회로 부품 판매점
TVS Diode Array
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 Semtech Corporation |
SM05 THRU SM36
TVS Diode Array
PROTECTION PRODUCTS
Description
The SM series of transient voltage suppressors (TVS)
are designed to protect components which are
connected to data and transmission lines from voltage
surges caused by ESD (electrostatic discharge), EFT
(electrical fast transients), and lightning.
TVS diodes are characterized by their high surge
capability, low operating and clamping voltages, and
fast response time. This makes them ideal for use as
board level protection of sensitive semiconductor
components. The dual-junction common-anode design
allows the user to protect one bidirectional data line or
two unidirectional lines. The low profile SOT23
package allows flexibility in the design of crowded
circuit boards.
The SM series will meet the surge requirements of IEC
61000-4-2 (Formerly IEC 801-2), Level 4, Human
Body Model for air and contact discharge.
Features
u 300 watts peak pulse power (tp = 8/20µs)
u Transient protection for data & power lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp=5/50ns)
IEC 61000-4-5 (Lightning) 12A (tp=1.2/50µs)
u Protects one bidirectional line or two unidirectional
lines
u Working Voltages: 5V, 12V, 15V, 24 and 36V
u Low clamping voltage
u Solid-state silicon avalanche technology
Mechanical Characteristics
u JEDEC SOT23 package
u Molding compound flammability rating: UL 94V-0
u Marking : Marking Code
u Packaging : Tape and Reel per EIA 481
Applications
u Cellular Handsets and Accessories
u Portable Electronics
u Industrial Controls
u Set-Top Box
u Servers, Notebook, and Desktop PC
Circuit Diagram
Schematic & PIN Configuration
Revision 9/2000
SOT23 (Top View)
1 www.semtech.com
SM05 THRU SM36
PROTECTION PRODUCTS
Absolute Maximum Rating
Rating
Peak Pulse Power (tp = 8/20µs)
Thermal Resistance, Junction to Ambient
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Electrical Characteristics
SM05
Parameter
Symbol
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
VRWM
VBR
IR
VC
Maximum Peak Pulse Current
Junction Capacitance
Ipp
Cj
Junction Capacitance
Cj
Symbol
Ppk
qJA
TL
TJ
TSTG
Value
300
556
260 (10 sec.)
-55 to +125
-55 to +150
Units
Watts
°C/W
°C
°C
°C
Conditions
It = 1mA
VRWM = 5V, T=25°C
IPP = 1A,
tp = 8/20µs
tp = 8/20µs
Pin 1 to 2
VR = 0V, f = 1MHz
Pin 1 to 3 and
Pin 2 to 3
VR = 0V, f = 1MHz
Minimum
6
Typical
Maximum
5
20
9.8
Units
V
V
µA
V
17 A
350 pF
400 pF
SM12
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
Ipp
Cj
Cj
Conditions
It = 1mA
VRWM = 12V, T=25°C
IPP = 1A,
tp = 8/20µs
tp = 8/20µs
Pin 1 to 2
VR = 0V, f = 1MHz
Pin 1 to 3 and
Pin 2 to 3
VR = 0V, f = 1MHz
Minimum
13.3
Typical
Maximum
12
1
19
Units
V
V
µA
V
12 A
120 pF
150 pF
ã 2000 Semtech Corp.
2
www.semtech.com
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( semtech )
SM05TG diode
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