SG6508 반도체 회로 부품 판매점
DIODE ARRAY CIRCUITS
|
|
 Microsemi Corporation |
SG5768, SG5770, SG5772, SG5774
SG6506/SG6507/SG6508/SG6509
DIODE ARRAY CIRCUITS
DESCRIPTION
The Linfinity series of diode arrays feature high breakdown, high speed
diodes in a variety of configurations.
Each array configuration consists of either common anode diodes,
common cathode diodes, or a combination of common anode and
common cathode diodes.
Individual diodes within the array have 60V minimum breakdown
voltage, can handle 500mA of current and typically switch in less than
10 nanoseconds.
Each of the array configurations is available in ceramic DIP or ceramic
flatpack and can be processed to JANTXV, JANTX, or JAN flows at
Linfinity’s MIL-S-19500 facility.
FEATURES
• 60V minimum breakdown voltage
• 500mA current capability per diode
• Fast switching speeds: typically less than
10ns
• Low leakage current
HIGH RELIABILITY FEATURES
♦ MIL-S-19500/474 QPL - 1N5768 - 1N6506
- 1N5770 - 1N6507
- 1N5772 - 1N6508
- 1N5774 - 1N6509
♦ JANTXV, JANTX & JAN available
♦ LMI level "S" processing available
CIRCUIT DIAGRAMS
COMMON CATHODE
SG5768/SG6506
COMMON ANODE
SG5770/SG6507
COMMON ANODE / COMMON CATHODE
SG5772/SG6508
6/90 Rev 1.1 2/94
Copyright © 1994
DUAL COMMON ANODE / COMMON CATHODE
SG5774/SG6509
LINFINITY Microelectronics Inc.
1 11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 ∞ FAX: (714) 893-2570
DIODE ARRAY SERIES
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (VBR) ................................................... 60V
Output Current (IO), TC = 25°C
Continuous ................................................................ 500mA
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package:
Thermal Resistance-Junction to Case, θJC .................. 30°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 80°C/W
F Package (10 Pin):
Thermal Resistance-Junction to Case, θJC .................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 145°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case, θJC .................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 140°C/W
Operating Junction Temperature
Hermetic (J, F Packages) ............................................ 150°C
Storage Temperature Range ............................ -65°C to 200°C
Note A.
Junction Temperature Calculation:
T
J
=
T
A
+
(P
D
x
θ
).
JA
Note B. The above numbers for θJC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The θJA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
RECOMMENDED OPERATING CONDITIONS (Note 3)
Operating Ambient Temperature Range
SG5768 .......................................................... -55°C to 150°C
SG5770 .......................................................... -55°C to 150°C
SG5772 .......................................................... -55°C to 150°C
Note 3. Range over which the device is functional.
Operating Ambient Temperature Range
SG5774 .......................................................... -55°C to 150°C
SG6506 .......................................................... -55°C to 150°C
SG6507 .......................................................... -55°C to 150°C
SG6508 .......................................................... -55°C to 150°C
SG6509 .......................................................... -55°C to 150°C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating temperature of TA = 25°C for each diode. Low duty cycle pulse testing techniques
are used which maintains junction and case temperatures equal to the ambient temperature.)
Parameter
Test Conditions
Breakdown Voltage (VBR)
Forward Voltage (V )
F
Reverse Current (IR)
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (trr)
(Note 4)
IR = 10µA
Duty Cycle ≤ 2%, 300 µs pulse
IF = 100mA
IF = 200mA
I = 500mA
F
IF = 10mA, TA = -55°C
VR = 40V
VR = 40V, TA = 150°C
VR = 0V, f = 1MHz, Pin-to-pin
IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
IF = IR = 200mA, irr = 20mA, RL = 100Ω
Note 4. The parameters, although guaranteed, are not 100% tested in production.
SG5768/SG6506
Min. Typ. Max.
60
Units
V
1.0 V
1.1 V
1.5 V
1.0 V
100 nA
50 µA
4 pf
40 ns
20
6/90 Rev 1.1 2/94
Copyright © 1994
LINFINITY Microelectronics Inc.
2 11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 ∞ FAX: (714) 893-2570
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Microsemi Corporation
( microsemi )
SG6508 diode
데이터시트 다운로드 :
[ SG6508.PDF ]
[ SG6508 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SG6506
DIODE ARRAY CIRCUITS - Microsemi Corporation
SG6507
DIODE ARRAY CIRCUITS - Microsemi Corporation
SG6507J
Diode ( Rectifier ) - American Microsemiconductor
SG6508
DIODE ARRAY CIRCUITS - Microsemi Corporation
SG6508J
Diode ( Rectifier ) - American Microsemiconductor
SG6509
DIODE ARRAY CIRCUITS - Microsemi Corporation
SG6509J
DIODE ARRAY CIRCUITS - Microsemi Corporation