ERB32 반도체 회로 부품 판매점
Fast Recovery Diode ( Rectifier )
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 Fuji Electric |
ERB32 (1.2A)
FAST RECOVERY DIODE
( 100 to 200V / 1.2A )
Outline drawings, mm
ø4.0
ø0.8
28 MIN.
7.5 28 MIN.
Features
Super high speed switching
Low VF in turn on
High reliability
Applications
High speed switching
Marking
Color code : Orange
Abridged type name
Voltage class
Lot No.
Lot No.division mark ···
Cathode mark
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Repetitive peak reverse voltage
VRRM
Non-repetitive peak reverse voltage VRSM
Average forward current
IF(AV)
Resistive load (Ta =40°C)
Surge current
IFSM Sine wave 10ms
Operating junction temperature
Tj
Storage temperature
Tstg
Rating
-01 -02
100 200
100 200
1.2
50
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM IFM=1.2A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr IF=0.1A, IR=0.1A
Max.
-01 -02
0.92
10 50
100
Unit
V
µA
ns
(100V to 200V / 1.2A )
Characteristics
ERB32(1.2A)
Forward characteristics
Reverse characteristics
5
3
IF 1.0
[A]
0.5
0.3
0.1
0.05
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF [V]
10
IR
[µA] 1
0.1
0.01
0
100 200
VR [V]
300
Current derating (IF(AV)-Ta)
1.4
1.2
1.0
IF(AV) 0.8
[A]
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140
Ta [°C]
Junction capacitance characteristics
100
50
30
Cj
[pF]
10
5
3
10
30 50 100
VR [V]
300
100
50
30
IFSM
[A]
10
5
3
1
Surge capability
35
10
[time] (at 50Hz)
30
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제조업체: Fuji Electric
( fuji )
ERB32 diode
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[ ERB32.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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