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BAT62-09S 반도체 회로 부품 판매점

Silicon Schottky Diode



Infineon Technologies AG 로고
Infineon Technologies AG
BAT62-09S 데이터시트, 핀배열, 회로
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
Pb-free (RoHS compliant) package
BAT62...
BAT62
"!
, ,

BAT62-09S
$#
"
, ,
!
BAT62-03W
BAT62-02V
BAT62-02W

BAT62-07W
"!
, ,

BAT62-02L
BAT62-02LS
12
BAT62-07L4
4
D1
1
3
D2
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAT62-02W**
BAT62
BAT62-02L
BAT62-02LS*
BAT62-02V
BAT62-03W
BAT62-07L4
BAT62-07W
BAT62-09S
Package
SCD80
SOT143
TSLP-2-1
TSSLP-2-1
SC79
SOD323
TSLP-4-4
SOT343
SOT363
Configuration
single
anti-parallel pair
single, leadless
single, leadless
single
single
parallel pair, leadless
parallel pair
parallel high, high isolation
LS(nH)
0.6
2
0.4
0.2
0.6
1.8
0.4
1.8
1.6
Marking
62
62s
L
U
k
white L
62
62s
69s
* Preliminary Data
** Not for new design
1 2014-02-13


BAT62-09S 데이터시트, 핀배열, 회로
BAT62...
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
BAT62, TS 85 °C
BAT62-02L, -07L4, -03W, TS 108 °C
BAT62-02W, -02V, TS 109 °C
BAT62-07W, TS 103 °C
BAT62-09S, TS 105 °C
VR
IF
Ptot
Junction temperature
Storage temperature
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
BAT62
BAT62-02L, -07L4, -03W
BAT62-02W, 02V
BAT62-07W
BAT62-09S
Symbol
RthJS
Value
40
20
100
100
100
100
100
150
-55 ... 150
Value
650
420
410
470
tbd
Unit
V
mA
°C
Unit
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 40 V
Forward voltage
IF = 2 mA
Forward voltage matching2)
IF = 2 mA
IR
VF
VF
- - 10 µA
- 0.58 1 V
- - 20 mV
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2VF is the difference between lowest and highest VF in a multiple diode component.
2 2014-02-13




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제조업체: Infineon Technologies AG

( infineon )

BAT62-09S diode

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BAT62-09S

Silicon Schottky Diode - Infineon Technologies AG