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Infineon Technologies AG |
BAS125W
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
3
2
BAS125W
BAS125-04W
3
BAS125-05W
3
BAS125-06W
3
1
VSO05561
1
13
EHA07002
2
EHA07005
1
2
EHA07004
1
2
EHA07006
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAS125W
13s
1=A
2 n.c.
3=C
SOT323
BAS125-04W
14s
1 = A1
2 = C2
3 = C1/A2 SOT323
BAS125-05W
15s
1 = A1
2 = A2
3 = C1/2 SOT323
BAS125-06W
16s
1 = C1
2 = C2
3 = A1/2 SOT323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current (t 100s)
Total power dissipation BAS125W, TS = 93 °C
BAS 125-04W...06W
, TS = 84 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - soldering point1)
BAS125W
BAS125-04W...06W
Symbol
VR
IF
IFSM
Ptot
Ptot
Tj
Top
Tstg
RthJS
Value
25
100
500
250
250
150
-55 ... 150
-55 ... 150
230
265
Unit
V
mA
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Nov-15-2001
BAS125W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
VR = 25 V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 35 mA
IR
- - 100
- - 150
VF
- 385 400
- 530 650
- 800 950
Unit
nA
mV
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 10 kHz
CT - - 1.1 pF
Rf - 16 -
2 Nov-15-2001
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