BZD23-C33 반도체 회로 부품 판매점
Voltage regulator diodes
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D119
BZD23 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
1996 Jun 10
Philips Semiconductors
Voltage regulator diodes
Product specification
BZD23 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec™(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
k
a
MAM248
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
Ptot total power dissipation
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
Ptot total power dissipation
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
PZSM
non-repetitive peak reverse
power dissipation
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
PRSM
non-repetitive peak reverse
power dissipation
BZD23-C7V5 to -C510
Tstg storage temperature
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
Tj junction temperature
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
CONDITIONS
Ttp = 25 °C; lead length 10 mm;
see Figs 2 and 3
Tamb = 55 °C; see Figs 2 and 3;
PCB mounted (see Fig.7)
tp = 100 µs; square pulse;
Tj = 25 °C prior to surge; see Figs 4 and 5
10/1000 µs exponential pulse (see Fig.8);
Tj = 25 °C prior to surge
MIN.
−
−
−
−
−
−
−
−65
−65
−65
−65
MAX. UNIT
2.0 W
2.5 W
1.0 W
1.0 W
300 W
300 W
150 W
+200 °C
+175 °C
+200 °C
+175 °C
1996 Jun 10
2
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BZD23-C33 diode
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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