BYT54B 반도체 회로 부품 판매점
Fast Avalanche Sinterglass Diode
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 Vishay Telefunken |
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
949539
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Very fast rectification and switching diodes
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
BYT54M
BYT54M-TR
BYT54M
BYT54M-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
TYPE DIFFERENTIATION
VR = 50 V; IF(AV) = 1.25 A
VR = 100 V; IF(AV) = 1.25 A
VR = 200 V; IF(AV) = 1.25 A
VR = 400 V; IF(AV) = 1.25 A
VR = 600 V; IF(AV) = 1.25 A
VR = 800 V; IF(AV) = 1.25 A
VR = 1000 V; IF(AV) = 1.25 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT54A
BYT54B
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
Peak forward surge current
Average forward current
tp = 10 ms, half sine wave
On PC board
l = 10 mm
BYT54J
Non repetitive reverse avalanche energy
I(BR)R = 0.4 A
BYT54K
BYT54M
Junction and storage temperature range
SYMBOL
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IF(AV)
IF(AV)
ER
ER
ER
Tj = Tstg
VALUE
50
100
200
400
600
800
1000
30
0.75
1.25
10
10
10
- 55 to + 175
UNIT
V
V
V
V
V
V
V
A
A
A
mJ
mJ
mJ
°C
Rev. 1.8, 11-Sep-12
1 Document Number: 86031
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction ambient
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
RthJA
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBO
L
MIN.
Forward voltage
IF = 1 A
VF -
Reverse current
VR = VRRM
VR = VRRM, Tj = 150 °C
IR -
IR -
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr -
TYP.
-
-
-
-
MAX.
1.5
5
150
100
UNIT
V
μA
μA
ns
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
120
100
80
60
ll
40
20
TL = constant
0
0 5 10 15 20 25 30
949552
l - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
1.4
VR = VRRM
1.2 half sinewave
1.0 RthJA = 45 K/W
I = 10 mm
0.8
0.6 RthJA = 100 K/W
PCB: d = 25 mm
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180
16339
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
0.001
0
16338
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
1000
VR = VRRM
100
10
1
25
16340
50 75 100 125 150
Tj - Junction Temperature (°C)
175
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 11-Sep-12
2 Document Number: 86031
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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BYT54B diode
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[ BYT54B.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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