파트넘버.co.kr BZV90-33 데이터시트 PDF


BZV90-33 반도체 회로 부품 판매점

Voltage regulator diodes



NXP Semiconductors 로고
NXP Semiconductors
BZV90-33 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BZV90 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Oct 25
1999 May 17


BZV90-33 데이터시트, 핀배열, 회로
Philips Semiconductors
Voltage regulator diodes
Product specification
BZV90 series
FEATURES
Total power dissipation:
max. 1500 mW
Tolerance series: approx. ±5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 40 W.
PINNING
PIN
1
2, 4
3
anode
cathode
anode
DESCRIPTION
APPLICATIONS
General regulation functions.
DESCRIPTION
Medium-power voltage regulator
diodes in SOT223 plastic SMD
packages.
The diodes are available in the
normalized E24 approx. ±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV90-C2V4 to C75).
handbook, halfpage
4
13
123
Top view
2, 4
MAM242
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
IF
IZSM
Ptot
PZSM
Tstg
Tj
PARAMETER
CONDITIONS
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Tamb = 25 °C; note 1
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.2
junction temperature
MIN. MAX.
400
see Table
“Per type”
1500
40
65 +150
150
Note
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2.
UNIT
mA
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
CONDITIONS
IF = 50 mA; see Fig.3
MIN.
MAX.
1.0
UNIT
V
1999 May 17
2




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