BZT55C3V0 반도체 회로 부품 판매점
Silicon Epitaxial Planar Z-Diodes
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 TEMIC Semiconductors |
TELEFUNKEN Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
Applications
Voltage stabilization
BZT55C...
94 9373
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
RthJAx300K/W
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJA
Value
500
Unit
K/W
Characteristics
Tj = 25_C
Parameter
Forward voltage
Test Conditions
IF=200mA
Type Symbol Min Typ Max Unit
VF 1.5 V
Rev. A1: 12.12.1994
1
BZT55C...
TELEFUNKEN Semiconductors
Type
VZnorm IZT for VZT 1) and rzjT
BZT55C... V mA
V
W
rzjk at IZK
W mA
IR and IR 2) at VR
mA mA V
2V4
2.4 5 2.28 to 2.56 < 85 < 600 1 < 100 < 50 1
2V7
2.7 5 2.5 to 2.9 < 85 < 600 1 < 10 < 50 1
3V0
3.0 5 2.8 to 3.2 < 90 < 600 1 < 4 < 40 1
3V3
3.3 5 3.1 to 3.5 < 90 < 600 1 < 2 < 40 1
3V6
3.6 5 3.4 to 3.8 < 90 < 600 1 < 2 < 40 1
3V9
3.9 5 3.7 to 4.1 < 90 < 600 1 < 2 < 40 1
4V3
4.3 5 4.0 to 4.6 < 90 < 600 1 < 1 < 20 1
4V7
4.7 5 4.4 to 5.0 < 80 < 600 1 < 0.5 < 10 1
5V1
5.1 5 4.8 to 5.4 < 60 < 550 1 < 0.1 < 2 1
5V6
5.6 5 5.2 to 6.0 < 40 < 450 1 < 0.1 < 2 1
6V2
6.2 5 5.8 to 6.6 < 10 < 200 1 < 0.1 < 2 2
6V8
6.8 5 6.4 to 7.2 < 8 < 150 1 < 0.1 < 2 3
7V5
7.5 5 7.0 to 7.9 < 7 < 50 1 < 0.1 < 2 5
8V2
8.2 5 7.7 to 8.7 < 7 < 50 1 < 0.1 < 2 6.2
9V1
9.1 5 8.5 to 9.6 < 10 < 50 1 < 0.1 < 2 6.8
10 10 5 9.4 to 10.6 < 15 < 70 1 < 0.1 < 2 7.5
11 11 5 10.4 to 11.6 < 20 < 70 1 < 0.1 < 2 8.2
12 12 5 11.4 to 12.7 < 20 < 90 1 < 0.1 < 2 9.1
13 13 5 12.4 to 14.1 < 26 < 110 1 < 0.1 < 2 10
15 15 5 13.8 to 15.6 < 30 < 110 1 < 0.1 < 2 11
16 16 5 15.3 to 17.1 < 40 < 170 1 < 0.1 < 2 12
18 18 5 16.8 to 19.1 < 50 < 170 1 < 0.1 < 2 13
20 20 5 18.8 to 21.2 < 55 < 220 1 < 0.1 < 2 15
22 22 5 20.8 to 23.3 < 55 < 220 1 < 0.1 < 2 16
24 24 5 22.8 to 25.6 < 80 < 220 1 < 0.1 < 2 18
27 27 5 25.1 to 28.9 < 80 < 220 1 < 0.1 < 2 20
30 30 5 28 to 32 < 80 < 220 1 < 0.1 < 2 22
33 33 5 31 to 35 < 80 < 220 1 < 0.1 < 2 24
36 36 5 34 to 38 < 80 < 220 1 < 0.1 < 2 27
39 39 2.5 37 to 41 < 90 < 500 1 < 0.1 < 5 30
43 43 2.5 40 to 46 < 90 < 600 0.5 < 0.1 < 5 33
47 47 2.5 44 to 50 < 110 < 700 0.5 < 0.1 < 5 36
51 51 2.5 48 to 54 < 125 < 700 0.5 < 0.1 < 10 39
56 56 2.5 52 to 60 < 135 < 1000 0.5 < 0.1 < 10 43
62 62 2.5 58 to 66 < 150 < 1000 0.5 < 0.1 < 10 47
68 68 2.5 64 to 72 < 200 < 1000 0.5 < 0.1 < 10 51
75 75 2.5 70 to 79 < 250 < 1500 0.5 < 0.1 < 10 56
1) tp/T ≤ 100 ms, tighter tolerances available on request. 2) at Tj = 150°C
TKVZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
2 Rev. A1: 12.12.1994
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제조업체: TEMIC Semiconductors
( temics )
BZT55C3V0 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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