BZT52-C6V8S 반도체 회로 부품 판매점
SURFACE MOUNT SILICON ZENER DIODES
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 Pan Jit International Inc. |
BZT52-C2V4S thru BZT52-C39S
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE 2.4 - 39 Volts POWER 200 mWatts
FEATURES
• Planar Die construction
• 200mW Power Dissipation
• Zener Voltages from 2.4V - 39V
• Ideally Suited for Automated Assembly Processes
MECHANICAL DATA
Case: SOD-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.008 gram
PACKAGE
SOD-323
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation (Notes A) at 25OC
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC method) (Notes B)
Operating Junction and StorageTemperature Range
Symbol
PD
IFSM
TJ
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
Value
200
2.0
-55 to +150
Units
mW
Amps
OC
Part Number: BZT52-C2V4S thru BZT52-C39S
PAGE 1
BZT52-C2V4S thru BZT52-C39S
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=100mA for all types.
Nominal Zener Voltage
Part Number
V Z @ IZT
Nom. V Min. V Max. V
200 mWatts Zener Diodes
BZT52-C2V4S
2.4 2.28 2.52
BZT52-C2V7S
2.7 2.5 2.9
BZT52-C3S
3 2.8 3.2
BZT52-C3V3S 3.3 3.1 3.5
BZT52-C3V6S
3.6 3.4 3.8
BZT52-C3V9S
3.9 3.7 4.1
BZT52-C4V3S 4.3 4 4.6
BZT52-C4V7S
4.7 4.4
5
BZT52-C5V1S
5.1 4.8 5.4
BZT52-C5V6S
5.6 5.2
6
BZT52-C6V2S
6.2 5.8 6.6
BZT52-C6V8S
6.8 6.4 7.2
BZT52-C7V5S 7.5 7 7.9
BZT52-C8V2S
8.2 7.7 8.7
BZT52-C9V1S
9.1 8.5 9.6
BZT52-C10S
10 9.4 10.6
BZT52-C11S
11 10.4 11.6
BZT52-C12S
12 11.4 12.7
BZT52-C13S
13 12.4 14.1
BZT52-C15S
15 13.8 15.6
BZT52-C16S
16 15.3 17.1
BZT52-C18S
18 16.8 19.1
BZT52-C20S
20 18.8 21.2
BZT52-C22S
22 20.8 23.3
BZT52-C24S
24 22.8 25.6
BZT52-C27S
27 25.1 28.9
BZT52-C30S
30 28 32
BZT52-C33S
33 31 35
BZT52-C36S
36 34 38
BZT52-C39S
39 37 41
Max. Zener Impedance
ZZT @ IZT
Ω mA
ZZK @ IZK
Ω mA
85 5 600 1
83 5 500 1
95 5 500 1
95 5 500 1
95 5 500 1
95 5 500 1
95 5 500 1
78 5 500 1
60 5 480 1
40 5 400 1
10 5 200 1
8 5 150 1
7 5 50 1
7 5 50 1
10 5 50 1
15 5 70 1
20 5 70 1
20 5 90 1
25 5 110 1
30 5 110 1
40 5 170 1
50 5 170 1
50 5 220 1
55 5 220 1
80 5 220 1
80 5 250 1
80 5 250 1
80 5 250 1
90 5 250 1
90 5 300 1
Max Reverse
Leakage Current
IR @ VR
µA V
100 1
75 1
50 1
25 1
15 1
10 1
5.0 1
5.0 2
0.1 0.8
0.1 1
0.1 2
0.1 3
0.1 5
0.1 6
0.1 7
0.1 7.5
0.1 8.5
0.1 9
0.1 10
0.1 11
0.1 12
0.1 14
0.1 15
0.1 17
0.1 18
0.1 20
0.1 22.5
0.1 25
0.1 27
0.1 29
Typical Temp.
Coefficient
TC
-0.075
-0.065
-0.060
-0.055
-0.055
-0.050
-0.035
-0.015
0.005
0.020
0.030
0.045
0.050
0.055
0.065
0.070
0.075
0.080
0.080
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.110
Package
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body.
4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (IZT or IZK) is superimposed on IZT or IZK.
5. Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5.
Part Number: BZT52-C2V4S thru BZT52-C39S
PAGE 2
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BZT52-C6V8S diode
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