BZT52C75 반도체 회로 부품 판매점
Surface mount Silicon Planar Zener Diodes
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 Diotec |
BZT52C2V4 ... BZT52C75 (500 mW)
BZT52C2V4 ... BZT52C75 (500 mW)
Surface mount Silicon Planar Zener Diodes
Silizium-Planar-Zener-Dioden für die Oberflächenmontage
Version 2015-03-10
Maximum power dissipation
2.7±0.1 Maximale Verlustleistung
Nominal Z-voltage
Nominale Z-Spannung
3 . 8±0.2
Plastic case
Type Kunststoffgehäuse
Code Weight approx.
Gewicht ca.
Dimensions - Maße [mm]
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
500 mW
3...75 V
~SOD-123
0.01 g
Standard Zener voltage tolerance is graded to the international E 24 (~ ±5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen
Reihe E 24 (~ ±5%). Andere Toleranzen oder höhere Arbeitsspannungen auf Anfrage.
Maximum ratings and Characteristics
Grenz- und Kennwerte
BZT52-series
Power dissipation – Verlustleistung
TA = 25°C
Ptot
500 mW 1)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj -50...+150°C
TS -50...+150°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA < 300 K/W 1)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
RthT < 240 K/W
Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite
BZT52C2V4 = MH, WX, 4C
BZT52C2V7 = MJ, W1, 4D
BZT52C3V0 = MK, W2, 4E
BZT52C3V3 = MM, W3, 4F
BZT52C3V6 = MN, W4, 4H
BZT52C3V9 = MP, W5, 4J
BZT52C4V3 = MR, W6, 4K
BZT52C4V7 = MX, W7, 4M
BZT52C5V1 = MY, W8, 4N
BZT52C5V6 = MZ, W9, 4P
Marking – Stempelung (alternative)
BZT52C6V2 = NA, WA, 4R
BZT52C16 = NN, WK, 5H
BZT52C6V8 = NB, WB, 4X
BZT52C18 = NP, WL, 5J
BZT52C7V5 = NC, WC, 4Y
BZT52C20 = NR, WM, 5K
BZT52C8V2 = ND, WD, 4Z
BZT52C22 = NX, WN, 5M
BZT52C9V1 = NE, WE, 5A
BZT52C24 = NY, WO, 5N
BZT52C10 = NE, WF, 5B
BZT52C27 = NZ, WP, 5P
BZT52C11 = NH, WG, 5C
BZT52C30 = PA, WQ, 5R
BZT52C12 = NJ, WH, 5D
BZT52C33 = PB, WR, 5X
BZT52C13 = NK, WI, 5E
BZT52C36 = PC, WS, 5Y
BZT52C15 = NM, WJ, 5F
BZT52C39 = PD, WT, 5Z
BZT52C43 = WU, 6A
BZT52C47 = WV, 6B
BZT52C51 = WW, 6C
BZT52C56 = 6D
BZT52C62 = 6E
BZT52C68 = 6F
BZT52C75 = 6H
1 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)
© Diotec Semiconductor AG
http://www.diotec.com/
1
Maximum ratings and Characteristics
(Tj = 25°C unless otherwise specified)
Type
Typ
Z-voltage range 1)
Z-Spanngs.-Bereich 1)
IZT = 5mA
Dynamic resistance
Diff. Widerstand
VZ min [V]
VZ max [V]
ZZK [Ω]
IZK [mA]
BZT52C2V4 2.2 2.6 < 100
5
BZT52C2V7 2.5 2.9 < 110
5
BZT52C3V0 2.8 3.2 < 120
5
BZT52C3V3 3.1 3.5 < 130
5
BZT52C3V6 3.4 3.8 < 130
5
BZT52C3V9 3.6 4.2 < 130
5
BZT52C4V3 4.0 4.6 < 130
5
BZT52C4V7 4.4 5.0 < 130
5
BZT52C5V1 4.8 5.4 < 130
5
BZT52C5V6
5.2 6.0
< 80
5
BZT52C6V2
5.8 6.6
< 50
5
BZT52C6V8
6.4 7.2
< 30
5
BZT52C7V5
7.0 7.9
< 30
5
BZT52C8V2
7.7 8.7
< 30
5
BZT52C9V1
8.5 9.6
< 30
5
BZT52C10
9.4 10.6
< 30
5
BZT52C11
10.4 11.6
< 30
5
BZT52C12
11.4 12.7
< 35
5
BZT52C13
12.4 14.1
< 35
5
BZT52C15
13.8 15.6
< 40
5
BZT52C16
15.3 17.1
< 40
5
BZT52C18
16.8 19.1
< 45
5
BZT52C20
18.8 21.2
< 50
5
BZT52C22
20.8 23.3
< 55
5
BZT52C24
22.8 25.6
< 60
5
BZT52C27
25.1 28.9
< 70
2
BZT52C30
28 32 < 80
2
BZT52C33
31 35 < 80
2
BZT52C36
34 38 < 90
2
BZT52C39
IZT = 2.5 mA
37 41
<100
2
BZT52C43
40 46 <130
2
BZT52C47
44 50 <150
2
BZT52C51
48 54 <180
2
BZT52C56
52 60 <180
2
BZT52C62
58 66 <200
2
BZT52C68
64 72 <250
2
BZT52C75
70 79 <300
2
BZT52C2V4 ... BZT52C75 (500 mW)
Grenz- und Kennwerte
(Tj = 25°C wenn nicht anders spezifiziert)
Temp. Coeffic.
of Z-voltage
…der Z-Spannung
Reverse volt.
Sperrspanng.
IR = 100 nA
Z-current 2)
Z-Strom 2)
TA = 25°C
αVZ [10-4 /°C]
VR [V]
IZmax [mA]
-9...-6
1 (<50 µA)
192
-9...-6
1 (<20 µA)
172
-8...-5
1 (<10 µA)
156
-8...-5
1 (<5 µA)
143
-8...-5
1 (<5 µA)
132
-8...-5
1 (<3 µA)
119
-6...-3
1 (<3 µA)
109
-5...+2
2 (<3 µA)
100
-2...+2
2 (<2 µA)
93
-5...+5
2 (<1 µA)
83
-3...+6
4 (<3 µA)
76
+3...+7
4 (<2 µA)
69
+3...+7
5 (<1 µA)
63
+8...+7
5 (<0.7 µA)
57
+3...+9
6 (<0.5 µA)
52
+3...+10
7
47
+3...+11
8
43
+3...+11
9
39
+3...+11
10
35
+3...+11
11
32
+3...+11
12
29
+3...+11
13
26
+3...+11
15
24
+4...+12
17
21
+4...+12
19
20
+4...+12
21
17
+4...+12
23
16
+4...+12
25
14
+4...+12
27
13
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
30 (< 2 µA)
33 (< 2 µA)
36 (< 2 µA)
39 (< 1 µA)
43 (< 1 µA)
47 (<0.2 µA)
52 (<0.2 µA)
57 (<0.2 µA)
12
11
10
9
8
8
7
6
1 Tested with pulses (20 ms) – Gemessen mit Impulsen (20 ms)
2 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)
2 http://www.diotec.com/
© Diotec Semiconductor AG
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BZT52C75 diode
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