1N5162 반도체 회로 부품 판매점
HIGH POWER RECTFIERS
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 Digitron Semiconductors |
1N3085-1N3092,
1N3111, 1N5162
High-reliability discrete products
and engineering services since 1977
HIGH POWER RECTFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Part
number
Maximum repetitive peak reverse
voltage
TC = -65° to +200°C
V
1N3111
50
1N3085
100
1N3086
200
1N3087
300
1N3088
400
1N3089
500
1N3090
600
1N3091
800
1N3092
1000
1N5162
1200
Maximum direct reverse voltage
TC = -65° to +200°C
V
40
80
160
240
320
400
480
640
800
960
Maximum average reverse current at
maximum rated IF(AV) and VRRM
TC = 150°C
mA
25
25
17
17
17
17
17
16
12
10
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
1N3111, 1N3085,
1N5162 SERIES
Maximum average forward current
IF(AV)
150
Maximum peak one-cycle non-repetitive
surge current
2850
3000
IFSM
3400
Maximum I2t for fusing
I2t
Maximum I2√t for individual fusing
Maximum peak forward voltage
Maximum operating case temperature
range
I2√t
VFM
TC
3550
41000
37500
58000
53000
580000
1.2
-65 to +200
Unit Test Condition
A 180° sinusoidal conduction max. TC = 150°C
Half cycle 50Hz sine
wave or 6ms
rectangular pulse
Half cycle 60Hz sine
wave or 5ms
A rectangular pulse
Half cycle 50Hz sine
wave or 6ms
rectangular pulse
Half cycle 60Hz sine
wave or 5ms
rectangular pulse
Following any rated
load condition and with
rated VRRM applied
Following any rated
load condition and with
VRRM applied following
surge = 0
t = 10ms
A2s t = 8.3ms
t = 10ms
t = 8.3ms
With rated VRRM applied
following surge, initial T
= 200°C
With VRRM = 0 following
surge, initial T = 200°C
A2√s t = 0.1 to 10ms, VRRM = 0 following surge
V IF(AV) = 150A, TC = 150°C
°C
Rev. 20121214
1N3085-1N3092,
1N3111, 1N5162
High-reliability discrete products
and engineering services since 1977
HIGH POWER RECTFIERS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
1N3111, 1N3085,
1N5162 SERIES
Maximum storage temperature range
Tstg
-65 to +200
Maximum internal thermal resistance,
junction to case
Rthjc
0.25
Thermal resistance, case to sink
Rthcs 0.10
MECHANICAL CHARACTERISTICS
Case DO-30(R)
Marking
Body painted, alpha-numeric
Normal polarity
Cathode is stud
Reverse polarity
Anode is stud (add “R” suffix)
Unit
°C
°C/W
DC operation
Test Condition
°C/W Mounting surface flat, smooth, greased
DO-30(R)
Inches
Millimeters
Min Max Min Max
A 4.375 4.625 111.13 117.47
B - 1.625 - 41.270
C 0.875 0.960 22.230 24.380
F 0.610 0.640 15.500 16.250
G 0.327 0.347 8.310 8.810
H 0.900 0.910 22.860 23.110
K 0.500 0.600 12.700 15.240
L 0.297 0.327 7.550 8.300
M 0.070 0.100 1.780 2.540
N 0.350 0.410 8.900 10.410
P 0.271 0.291 6.890 7.390
Q 1.050 1.060 26.670 26.920
Rev. 20121214
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Digitron Semiconductors
( digitrons )
1N5162 diode
데이터시트 다운로드 :
[ 1N5162.PDF ]
[ 1N5162 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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