1N6263 반도체 회로 부품 판매점
SMALL SIGNAL SCHOTTKY DIODES
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 JINAN JINGHENG ELECTRONICS |
R
SEMICONDUCTOR
FEATURES
For general purpose applications
Metal-on-silicon junction Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level applications
These diodes are also available in the MinMELF case with type
designation LL5711 and LL6263.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
1N5711, 1N6263
SMALL SIGNAL SCHOTTKY DIODES
DO-35
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Symbols
Peak Reverse Voltage
1N5711
1N6263
VRRM
VRRM
Power Dissipation (infinite Heat Sink)
Forward Continuous Current
TA=25 C
Ptot
IF
Maximum Single cycle surge 10ms square wave
IFSM
Junction Temperature
TJ
Storage Temperature Range
TSTG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Reverse breakover voltage
at IR=10mA
1N5711
1N6263
Leakage current at VR=50V
Forward voltage drop at IF=1mA
IF=15mA
Junction Capacitance at VR=0V ,f=1MHz
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
Thermal resistance
Symbols
VR
VR
IR
VF
VF
CJ
trr
RqJA
Min.
70
60
Value
70
60
400 1)
15
2.0
150
-55 to+150
Units
V
V
mW
mA
A
C
C
Typ. Max.
Unis
V
V
200
0.41
1.0
2.0
1
nA
V
V
pF
ns
400 K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
2-5
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES 1N5711 AND 1N6263
Fig.1 Typical variation of fwd. current vs forward. voltage for
primary conduction through the Schottky barrier
Fig.2 Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
mA mA
10 100
5
2
1
5
IF 2
0.1
80
60
IF
40
5
2
0.01
0
0.5
VF
1V
Fig.3 Typical variation of reverse current at
various temperatures
20
0
0 0.5
1V
VF
Fig.4 Typical capacitance curve as a function of
reverse voltage
μA
100
5
2
10
5
2
1
IR 5
2
0.1
5
2
0.01
0
150 C
125 C
100 C
75 C
50 C
25 C
10 20 30 40 50V
VR
pF
2
1
CJ
TJ=25 C
0
0 10 20 30 40 50V
VR
JINAN JINGHENG ELECTRONICS CO., LTD.
2-6
HTTP://WWW.JINGHENGGROUP.COM
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( jje )
1N6263 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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