VS-1N3883R 반도체 회로 부품 판매점
Fast Recovery Diodes
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 Vishay |
www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
Fast Recovery Diodes (Stud Version), 6 A, 12 A
DO-203AA (DO-4)
PRODUCT SUMMARY
IF(AV)
Package
Circuit configuration
6 A, 12 A
DO-203AA (DO-4)
Single diode
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC® types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
1N3879(R) TO 1N3883(R)
1N3889(R) TO 1N3893(R)
IF(AV)
TC maximum
6 (1)
100
12 (1)
100
IF(RMS)
IFSM
50 Hz
60 Hz
9.5
72
75 (1)
19
145
150 (1)
50 Hz
I2t
60 Hz
26 103
23 94
I2t 363 856
VRRM
Range
50 to 400 (1)
50 to 400 (1)
trr See Recovery Characteristics table See Recovery Characteristics table
TJ Range
-65 to +150
-65 to +150
Note
(1) JEDEC® registered values
UNITS
A
°C
A
A
A2s
I2s
V
ns
°C
Revision: 28-May-15
1 Document Number: 93144
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1N3879(R)
50
1N3880(R)
100
1N3881(R)
-
200
1N3882(R)
300
1N3883(R)
400
1N3889(R)
50
1N3890(R)
100
1N3891(R)
-
200
1N3892(R)
300
1N3893(R)
400
Note
(1) JEDEC® registered values
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
75
150
250
350
450
75
150
250
350
450
IRRM MAXIMUM
AT TJ = 25 °C
μA
IRRM MAXIMUM
AT TJ = 100 °C
mA
IRRM MAXIMUM
AT TJ = 150 °C
mA
15 (1)
1.0 (1)
3.0 (1)
25 (1)
3.0 (1)
5.0 (1)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS current
IF(RMS)
Maximum peak, one-cycle
non-repetitive forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum forward voltage drop
Note
(1) JEDEC® registered values
I2t
VFM
TEST CONDITIONS
180° conduction, half sine wave
DC
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial
TJ = 150 °C
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = 25 °C; IF = Rated IF(AV) (DC)
TC = 100 °C; IFM = x rated IF(AV)
1N3879(R)
TO 1N3883(R)
6 (1)
100
9.5
85
90
72
75 (1)
36
33
26
23
363
1.4 (1)
1.5 (1)
1N3889(R)
TO 1N3893(R)
12 (1)
100
19
170
180
145
150 (1)
145
130
103
94
1452
1.4 (1)
1.5 (1)
UNITS
A
°C
A
A2s
A2s
V
Revision: 28-May-15
2 Document Number: 93144
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-1N3883R diode
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